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In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm 2 /V⋅s, subthreshold swing of 183 mV, threshold voltage of −0.33 V, and on/off ratio of 1.34 × 10 8. These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material.

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