Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hotwall epitaxyWe studied strain-induced band splittings of ZnSe/GaAs and Zni-&@Se/GaAs epilayers of 0.064-3 pm thickness by reflectance and polarized photoluminescence. Polarized photoluminescence was found particularly useful in optical transition identification. The spectacular difference in magnetic field sensitivity of heavy hole and light hole exciton in ZnMnSe is also very helpful in transition identification. The evaluated heavy-light hole band splitting is in general accordance with previous data. An exceptionally strong variation of the strain with epilayer thickness is observed in the thickness range 0.5-2 pm.

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The valence band crystal field and spin-orbit splitting in hexagonal diluted magnetic semiconductors based on CdSe and CdS is studied. It is found that the crystal field splitting is practically magnetic ion independent for CdSe based crystals, whereas in the case of CdS based samples a strong influence of magnetic ion substitution on crystal field splitting is observed.

Line-shape analysis of magnetoreflectance spectra from ZnSe/Zn0.99Fe0.01Se quantum well structures was performed using a classical dielectric function model. This model explains the spectral dependence on the sample geometry, as well as providing additional evidence of spin superlattice formation in ZnSe/ZnFeSe heterostructures.