Commercial markets desire integrated multifrequency band-select duplexer and diplexer filters with a wide fractional bandwidth and steep roll-off to satisfy the ever-increasing demand for spectrum. In this paper, we discuss the fabrication and design of lithium niobate (LN) thin-film S 0 Lamb-wave resonators on a piezoelectric-on-piezoelectric platform. Filters using these resonators have the potential to fulfill all the above requirements. In particular, we demonstrated one-port highorder S 0 Lamb-wave resonators with resonant frequencies from ∼400 MHz to ∼1 GHz on a black rotated y-136 cut LN thin film. The effective electromechanical coupling factor (k 2 ef f ) ranges from 7% to 12%, while the measured quality factor ranges from 600 to 3300. The highest k 2 ef f × Q achieved on this chip is 194, significantly surpassing contour mode resonators manufactured in other technologies.[2014-0280]
This paper presents design and vacuum measurements of lithium niobate (LN) contour-mode resonators (CMR). By carefully positioning the inter-digital transducer (IDT), we achieved CMRs with k t 2 ×Q of 7%*2150=148 (IDT @ node) or resonators with very high k t 2 of 12.3% and spur-attenuated response (IDT @ anti-node). In addition, we demonstrated resonators with frequencies ranging from 400MHz to 800MHz on a single chip.
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