Multiple quantum well optical modulator structures using surface acoustic wave induced Stark effect

Jain, F.; Bhattacharjee, K.

doi:10.1109/68.43357

Cited by 29 publications

(10 citation statements)

References 11 publications

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“…2 Strained MQW modulators using surface acoustic wave ͑SAW͒-induced electric field and birefringence have also been reported. 3,4 Intrinsic strain modifies band gap, valance subbands, and results in changes of heavyand light-hole effective mass. 5,6 This changes the oscillator strength of the exciton transition in MQWs.…”

Section: Influence Of Intrinsic Strain On the Surface Acoustic Wave-imentioning

confidence: 99%

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

Wang

Jain

2003

Applied Physics Letters

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Section: Influence Of Intrinsic Strain On the Surface Acoustic Wave-imentioning

confidence: 99%

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

Wang

Jain

2003

Applied Physics Letters

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“…Surface Acoustic Wave ͑SAW͒ have been widely investigated in piezoelectric bulk materials including LiNbO 3 and GaAs, where the structures are homogenous 1 or multilayered. 2 Relatively a small amount of work have been reported on the interaction of SAW in III-V semiconductor quantum well ͑QW͒ structures.…”

Section: Introductionmentioning

confidence: 99%

“…2 Relatively a small amount of work have been reported on the interaction of SAW in III-V semiconductor quantum well ͑QW͒ structures. 3 In comparison to bulk materials, QWs are attractive for their excitonic optical properties. 4,5 Through the advantage of the quantumconfined Stark effect ͑QCSE͒, QWs are used for electroabsorptive and electro-optic modulators.…”

Section: Introductionmentioning

confidence: 99%

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Electro-optic and electro-absorptive modulations of AlGaAs/GaAs quantum well using surface acoustic wave

Choy

Li²,

Weiss

1998

Journal of Applied Physics

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Effects of lattice mismatch due to partially relaxed buffer layers in InGaAs/AlGaAs strain balanced quantum well modulators Appl.The surface acoustic wave produced electron absorptive and electro-optic modulation in AlGaAs/ GaAs quantum well structures are theoretically analyzed. The quantum well structures are optimized by maximizing the optical confinement of the modal field in the active region and the piezoelectric effect of surface acoustic wave on the quantum wells. The effect of penetration depth of the surface acoustic wave on the number ͑1-25 periods͒ of quantum wells, serving as the active region, is being studied. For 1-5 period structures, the quantum wells are designed on the top surface so that a strong piezoelectric effect can be obtained. For the 25-period structure, the quantum wells locate at a depth of two-thirds the acoustic-wave wavelength in order to obtain a uniform surface acoustic-wave-induced electric field. The results show that the single and five quantum well devices are suitable for absorptive modulation and optical modulation, respectively, while a general advantage of the 25-period quantum well modulator can shorten the modulation interaction length and increase the modulation bandwidth. The effective index change of these devices are at least ten times larger than the conventional surface acoustic wave devices. These results make the surface acoustic wave quantum well modulators more attractive for the development of acousto-optic device applications.

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“…Traditionally, acousto-optic interaction is realized by an acoustic wave-induced refractive index grating such as the Bragg grating or Raman-Nath grating. Recently, another type of acousto-optic modulator has been proposed [1][2][3] that utilizes the SAW-induced absorption coefficient or refractive index changes in MQWs of III-V semiconductor materials. The major difference is that these new types of acousto-optic modulators operate at frequency near resonance with the energy levels of the medium.…”

Section: Introductionmentioning

confidence: 99%

SAW-induced birefringence in InGaAs-GaAs multiple quantum well acousto-optic modulators

Wang

Dufilie

Jain

2002 IEEE Ultrasonics Symposium, 2002. Proceedings.

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A theoretical study of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures is presented. We use a two-dimensional Gaussian quadrature method to solve for the exciton oscillator strength in twodimensional momentum space.This method accounts for the asymmetric strain and electric field induced by the SAW. The optical absorption coefficient and refractive index changes near the band gap in MQWs are calculated as a function of SAW power at different well widths. We have found that SAW-induced birefringence is significantly dependent on the intrinsic strain. We computed birefringence ∆n=0.06 in 0.7% tensile strained InGaAs-GaAs MQWs for the two different polarizations (parallel and perpendicular to the SAW propagation direction) under normal incident light at a SAW power of 10 mW/λ SAW . This is a great improvement over our earlier compressively strained (~-1%) InGaAs-GaAs MQW modulators (∆n=0.01). The calculations are compared with absorption coefficient measurements on compressively strained InGaAs-GaAs MQW modulators.

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Multiple quantum well optical modulator structures using surface acoustic wave induced Stark effect

Cited by 29 publications

References 11 publications

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs–GaAs and InGaAsP–InP multiple-quantum-well optical modulators

Electro-optic and electro-absorptive modulations of AlGaAs/GaAs quantum well using surface acoustic wave

SAW-induced birefringence in InGaAs-GaAs multiple quantum well acousto-optic modulators

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