We report the effects of relative time delay of plasma plumes on thin garnet crystal films fabricated by dual-beam, combinatorial pulsed laser deposition. Relative plume delay was found to affect both the lattice constant and elemental composition of mixed Gd 3 Ga 5 O 12 (GGG) and Gd 3 Sc 2 Ga 3 O 12 (GSGG) films. Further analysis of the plasmas was undertaken using a Langmuir probe, which revealed that for relative plume delays shorter than ~200 µs, the second plume travels through a partial vacuum created by the first plume, leading to higher energy ion bombardment of the growing film. The resulting in-plane stresses are consistent with the transition to a higher value of lattice constant normal to the film plane that was observed around this delay value. At delays shorter than ~10 µs, plume propagation was found to overlap, leading to scattering of lighter ions from the plume and a change in stoichiometry of the resultant films.
Abstract:We demonstrate the first Tm-doped yttria planar waveguide laser to our knowledge, grown by pulsed laser deposition. A maximum output power of 35 mW at 1.95 µm with 9% slope efficiency was achieved from a 12 µm-thick film grown on a Y 3 Al 5 O 12 substrate.
The first, to the best of our knowledge, Q-switched operation of a pulsed-laser-deposited waveguide laser is presented. A clad Yb:Y(2)O(3) waveguide was Q-switched using an output coupling mirror coated with a single layer of graphene deposited by atmospheric pressure chemical vapor deposition. During continuous-wave operation, a maximum power of 83 mW at a slope efficiency of 25% was obtained. During Q-switched operation, pulses as short as 98 ns were obtained at a repetition rate of 1.04 MHz and a central wavelength of 1030.8 nm.
A 12µm thick composite Yb-doped and undoped yttria layer is grown on a YAG substrate by pulsed laser deposition. For 8.5W of incident laser diode pump power the waveguide laser emits 1.2W at 1030nm.
A range of crystalline garnet multilayer structures have been fabricated via multi-beam, multi-target PLD in conjunction with a system of mechanical shutters. Structures grown consisted of alternating Gd3Ga5O12 (GGG) and Gd3Sc2Ga3O12 (GSGG) layers on Y3Al5O12 (YAG) substrates, with both simple and chirped designs. Distinct layers are observed where layer thickness is around 2 nm or greater, although some layering may also be present at a sub-unit cell level. These structures demonstrate the viability of the shutter technique as a quick, simple fabrication method for a variety of optical multilayer structures.
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