A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current–voltage (I–V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.
A novel resistance switching memory scheme using Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well (QW) structures grown on a Si substrate has been proposed, and write-read-erase cyclic memory operation has been demonstrated by applying pulsed input voltage sequences at room temperature. A resistance switching voltage of less than 1.0 V, a peak current density of 30–72 kA/cm2, and an ON/OFF ratio of 1.9–30 were observed. Under an appropriate bias condition, a retention time of more than 315 h and cyclic pulsed operation corresponding to write-read-erase-read for more than 4500 cycles were achieved.
A novel scheme of resistance switching memory (Re-RAM) using Si/CaF 2 /CdF 2 /CaF 2 /Si resonant-tunneling quantum-well (QW) structures grown on Si substrate has been proposed and write-erase cyclic memory operation has been demonstrated at room temperature for the sample with thickness of 0.93/0.93/2.5/0.93 nm for respective layer sequence of Si/CaF 2 /CdF 2 /CaF 2 heterostructure grown on Si(111) substrate. Periodic pulsed operation corresponding to write-read-erase-read memory cycle more than 4500 cycles with 2 ms-width pulse sequences have been successfully observed.
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