A century ago, Taylor published a landmark in the organisational sciences: his Principles of Scientific Management. Many researchers have elaborated on Taylor's principles, or have been influenced otherwise. The authors of the current paper evaluate a century of enterprise development, and conclude that a paradigm shift is needed for dealing adequately with the challenges that modern enterprises face. Three generic goals are identified. The first one, intellectual manageability, is the basis for mastering complexity; current approaches fall short in assisting professionals to master the complexity of enterprises and enterprise changes. The second goal, organisational concinnity, is conditional for making strategic initiatives operational; current approaches do not, or inadequately, address this objective. The third goal, social devotion, is the basis for achieving employee empowerment as well as knowledgeable management and governance; modern employees are highly educated knowledge workers; yet, the mindset of managers has not evolved accordingly. The emerging discipline of Enterprise Engineering, as conceived by the authors, is considered to be a suitable vehicle for achieving these goals. It does so by providing new, powerful theories and effective methodologies. A theoretical framework is presented for positioning the theories, goals, and fundamentals of enterprise engineering in four classes: philosophical, ontological, ideological and technological.
A thin diffusion barrier was self-formed by annealing at an interface between a Cu-Mn alloy film and a SiO2 substrate. The growth of the barrier layer followed a logarithmic rate law, which represents field-enhanced growth mechanism in the early stage and self-limiting growth behavior in the late stage. The barrier layer was stable at 450 °C for 100 h and at 600 °C for 10 h. The interface diffusivity was estimated from the morphology change of the barrier layer at 600 °C and was found to be smaller than the grain-boundary diffusivity of bulk Cu.
A diffusion barrier layer was self-formed at the interface between Cu–Mn alloy and tetraethylorthosilicate oxide layers at 250–450°C. No interdiffusion occurred across the self-formed barrier layer during annealing at these temperatures up to 100h. The growth of the barrier layer obeyed a logarithmic law and depended on manganese concentration. The barrier thickness could be controlled in the range of 2–8nm.
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