Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.

We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.

The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms along the hole edges, as well as atom migration. These observations are compared to density functional theory calculations and molecular dynamics simulations.

The physical and chemical properties of MXenes are strongly dependent on surface terminations; thus, the tailoring of surface functional groups in two-dimensional transition-metal carbides (MXenes) may extend the applicability of these compelling materials to a wider set of fields. In this work, we demonstrate the chemical modification of Ti3C2T x MXene via diazonium covalent chemistry and the subsequent effects on the electrical properties of MXene. The 4-nitrophenyl group was grafted onto the surface of MXene through a solid–liquid reaction, which was confirmed by various characterization methods, including X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, electron energy loss spectroscopy, atomic force microscopy, and transmission electron microscopy. The degree of modification of MXene is expediently tunable by adjusting the concentration of the diazonium salt solution. The work function of functionalized MXene is modifiable by regulating the quantity of grafted diazonium surface groups, with an adjustable range of around 0.6 eV. Further, in this study, the electrical properties of modified MXene are investigated through the fabrication of field-effect-transistor devices that utilize modified MXene as a channel material. It was demonstrated that with increasing concentration of 4-nitrophenyl groups grafted onto the surface the on/off current ratio of the modified MXene was improved to as much as 3.56, with a corresponding decrease in conductivity and mobility. The proposed approach of controlled modification of surface groups in Ti3C2T x may imbue Ti3C2T x with favorable electronic behaviors and demonstrate prospects for use in electronic field applications.