Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation

Ryu, Gyeong Hee; Park, Hyo Ju; Ryou, Junga; Park, Jin-Woo; Lee, Jongyeong; Kim, Gwangwoo; Shin, Hyeon Suk; Bielawski, Christopher W.; Ruoff, Rodney S.; Hong, Suklyun; Lee, Zonghoon

doi:10.1039/c5nr01473e

Cited by 71 publications

(80 citation statements)

References 34 publications

(39 reference statements)

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“…Figure 4d shows an intensity profile in the raw ARTEM image of Figure 4c, where Zn, O, and C atoms can be distinguished, because the Zn atoms display 4.5% higher intensity than the O atoms with ±1.5% deviation in the real image. 44 This result reveals the lateral growth of ZnO as heteroepitaxy growth on graphene at the atomic scale. The observed ZnO monolayer appears crystallographically identical to the graphene-like structure.…”

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Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

et al. 2016

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Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique. Here, we report atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition. We demonstrate atom-by-atom growth of zinc and oxygen at the preferential zigzag edge of a ZnO monolayer on graphene through in situ observation. We experimentally determine that the thinnest ZnO monolayer has a wide band gap (up to 4.0 eV), due to quantum confinement and graphene-like structure, and high optical transparency. This study can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial growth.

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Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

et al. 2016

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“…That is, the calculated stability of triangle vacancy structures and the magnetic properties were found to depend on the type of terminated atoms and vacancy sizes of triangle vacancy due to lone electrons at edge atoms. The triangular vacancy structures were found in experiments for using a free-standing h -BN sheet [12–15]. Electron beam irradiation results in increasing size of vacancy structures that maintain triangular shape [12, 13] regardless of the vacancy size.…”

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Investigations of Vacancy Structures Related to Their Growth in h-BN Sheet

2017

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The atomic, electronic, and magnetic properties of vacancy structures with triangular shape related to their growth in single hexagonal boron nitride (h-BN) sheet are investigated using density functional theory calculations. We find that the optimized structures of triangular vacancies depend on the vacancy sizes with N-terminated zigzag edge. Then, vacancy structures obtained during the vacancy evolution in h-BN sheet are considered by removing a boron-nitrogen pair (BN pair) from edges of triangular vacancies. The magnetic properties of those vacancy structures are investigated by local density of states and spin densities. It is found that the stability of the optimized structures with a BN missing pair depends on the BN-pair missing position: the most stable structure is a BN-pair missing structure at the edge face region with the smallest magnetic moment.

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“…Special care should be taken when cleaning the PMMA to obtain atomically resolved HRTEM imaging as well for high sensitivity nanopore sensing. An HRTEM image of the h-BN lattice can be seen in Figure 2a, where the lattice is represented by a white-atom contrast 29,30 that is directly related to actual atomic positions. While the contrasts of B and N atoms are similar, they are distinguishable under suitable imaging conditions.…”

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Geometrical Effect in 2D Nanopores

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A long-standing problem in the application of solidstate nanopores is the lack of the precise control over the geometry of artificially formed pores compared to the well-defined geometry in their biological counterpart, that is, protein nanopores. To date, experimentally investigated solid-state nanopores have been shown to adopt an approximately circular shape. In this Letter, we investigate the geometrical effect of the nanopore shape on ionic blockage induced by DNA translocation using triangular h-BN nanopores and approximately circular molybdenum disulfide (MoS 2 ) nanopores. We observe a striking geometrydependent ion scattering effect, which is further corroborated by a modified ionic blockage model. The well-acknowledged ionic blockage model is derived from uniform ion permeability through the 2D nanopore plane and hemisphere like access region in the nanopore vicinity. On the basis of our experimental results, we propose a modified ionic blockage model, which is highly related to the ionic profile caused by geometrical variations. Our findings shed light on the rational design of 2D nanopores and should be applicable to arbitrary nanopore shapes.

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Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiation

Cited by 71 publications

References 34 publications

Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

Investigations of Vacancy Structures Related to Their Growth in h-BN Sheet

Geometrical Effect in 2D Nanopores

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