Thermal expansion coefficient of heavily doped LPCVD polycrystalline (poly-Si) thin film was extracted by microgauge sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film was extracted. The results revealed a value of 2.9x106 /K of thermal expansion coefficient of highly doped poly-Si thin films with standard deviation ofO.24x106 /K.
This paper describe the 2 dimensional fully coupled analysis with EM field and thermal-fluid analysis using commercial software to predict the temperature distribution of the UHV Gas Insulated Bus (GIB). To perform the heat transfer simulation, sources are calculated in the ohmic loss of the conductor and eddy current loss of the enclosure by harmonic eddy current analysis. The emissivity and absorption coefficient are determined by experimental data and referred from references and the local hot spot are estimated by 3 dimensional coupled simulations. The actual 145kV three phases GIB was used for the experiment and temperature sensors were installed. The accuracy of the analysis is verified through the comparison of the simulation temperature result and experimented in UHV GIB.
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