Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Chae, Jung-Hun; Park, Hyoung-Sang; Kang, Sang‐Won

doi:10.1149/1.1475199

Cited by 96 publications

(79 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[26] Nickel films have been deposited indirectly by first making the oxide and reducing that with hydrogen [27] or hydrogen radicals. [28] Despite some initial reports [29] on copper ALD this metal has remained quite problematic. Recently, it was shown that copper seed layers may be formed indirectly by first depositing a copper oxide film using [Cu(thd) 2 ]/O 3 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) as precursors and then reducing CuO to metallic copper with alcohols, aldehydes, or carboxylic acids.…”

Section: Metal Filmsmentioning

confidence: 99%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

2003

View full text Add to dashboard Cite

New materials, namely high-k (high-permittivity) dielectrics to replace SiO(2), Cu to replace Al, and barrier materials for Cu, are revolutionizing modern integrated circuits. These materials must be deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required.

show abstract

Section: Metal Filmsmentioning

confidence: 99%

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

2003

View full text Add to dashboard Cite

show abstract

“…Moreover, the deposition temperature requirements of ALD processes are generally low compared to their CVD counterparts, rendering ALD compatible with the technological trend towards lower processing temperatures. [22][23][24] Despite these advantages that ALD offers, reports on its application for the synthesis of NiO are still comparatively rare. Over the past years, several Ni precursors have been examined for the ALD of NiO, such as Ni(acac) 2 (acac ¼ acetylacetonate), [25] Ni(apo) 2 (apo ¼ 2-aminopent-2-en-4-onato), [25] Ni(dmg) 2 (dmg ¼ dimethyl-glyoximato), [25] Ni(Cp) 2 (Cp ¼ cyclopentadienyl), [26] Ni(EtCp) 2 (EtCp ¼ ethylcyclopentadienyl), [27] Ni(thd) 2 (thd ¼ tetramethyl heptanedionato), [28] and Ni(dmamp) 2 (dmamp ¼ 1-dimethylamino-2-methyl-2-propanolate), [29] in combination with various oxygen sources.…”

Section: Introductionmentioning

confidence: 99%

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Premkumar

Toeller

Adelmann

et al. 2012

Chemical Vapor Deposition

View full text Add to dashboard Cite

NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb) 2 (dmamb ¼ 1-dimethylamino-2-methyl-2-butanolate) precursor using O 3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, microstructure, and homogeneity. The Ni(dmamb) 2 half-cycle shows an initial rapid partial saturation followed by slower further adsorption. By contrast, the O 3 half-cycle shows good saturation behavior. In the studied deposition temperature range for ALD, the films are polycrystalline with negligible amounts of carbon in the films. Furthermore, the films are homogeneous in thickness and composition, demonstrating that high-quality NiO films can be deposited by ALD from Ni(dmamb) 2 .

show abstract

“…The precursor combination Ni(cp) 2 /H 2 O gave high carbon contamination (16%), which could be reduced by a hydrogen plasma. [27,28] The precursor combination Ni(Mecp) 2 /H 2 O 2 yielded amorphous films at temperatures as high as 400 8C. [29] The nickel precursors Ni(dmamp) 2 and Ni(dmamb) 2 decompose easily at low temperatures but have been used, together with water, to grow amorphous oxide films.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

Lindahl

Ottosson

Carlsson

2009

Chemical Vapor Deposition

View full text Add to dashboard Cite

Polycrystalline nickel oxide is deposited on SiO 2 substrates by alternating pulses of bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd) 2 ) and H 2 O. The deposition process shows atomic layer deposition (ALD) characteristics with respect to the saturation behavior of the two precursors at deposition temperatures up to 275 8C. The growth of nickel oxide is shown to be highly dependent on surface hydroxide groups, and a large excess of H 2 O is required to achieve saturation. Throughout the deposition temperature range the amount of carbon in the film, originating from the metal precursor ligand, is in the range 1-2%. Above 275 8C ALD growth behavior is lost in favor of thermal decomposition of the metal precursor. The initial nucleation process is studied by atomic force microscopy (AFM) and reveals nucleation of well-separated grains which coalesce to a continuous film after about 250 ALD cycles.

show abstract

Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Cited by 96 publications

References 15 publications

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination

Contact Info

Product

Resources

About

Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Cited by 96 publications

References 15 publications

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination

Contact Info

Product

Resources

About

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)₂ and Ozone as Precursors

Atomic Layer Deposition of NiO by the Ni(thd)₂/H₂O Precursor Combination