Spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer was analyzed and modeled via micromagnetic simulation. In an AP structure, an external field results in a torque, causing the antiparallel magnetization (AP) axis to rotate towards the direction orthogonal to the field. In addition, due to its strength difference between the two AP layers, the magnetostatic field from the free layer of the spin valve can lead to irreversible AP axis flipping. This irreversible flipping can be effectively prevented by applying an AFIF exchange pinning to one of the AP layers to overcome the differential field from the free layer.Index Terms----Spin valve MRAM, synthetic antiferromagnet.
A simple displacement measurement based on the attenuated total reflection technique is proposed and experimentally demonstrated. By analyzing the fringe shift of the reflective pattern recorded on a CCD camera, a slight displacement, which corresponds to a change in the waveguide thickness, can be determined in real time with adequate accuracy. The measurement range of this method is about 240 μm, and its accuracy can reach 0.05 μm.
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