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Owing to its ultrafast scintillation, quite high light yield, strong radiation resistance, and non-deliquescence, ZnO(Ga) is a highly promising choice for an ultrafast X-ray detector. Because of its high deposition rate, good production repeatability and strong adhesive force, reactive magnetron sputtering was used to produce a ZnO(Ga) crystal on a quartz glass substrate, after the production conditions were optimized. The fluorescence lifetime of the sample was 173 ps. An ultrafast X-ray scintillating detector, equipped with a fast microchannel plate (MCP) photomultiplier tube (PMT), was developed and the X-ray tests show a signal full width at half maximum (FWHM) of only 385.5 ps. Moreover, derivation from the previous measurement shows the ZnO(Ga) has an ultrafast time response (FWHM = 355.1 ps) and a high light yield (14740 photons/MeV).

Growth and orientation dependence of electrical properties of 0.92Na0.5Bi0.5TiO3-0.08 K0.5Bi0.5TiO3 lead-free piezoelectric single crystal

in the polarographic solution. Low concentrations of iron and aluminum do not interfere, but adverse effects were noted when relatively large amounts of these ions were introduced in preliminary tests. As little as 10 p.p.m. of arsenate and chromate interfere. Silicate and phosphate do not show adverse effects at concentrations within the limits imposed by the recommended size of the sample aliquots.

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