Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO) surface reacts with HO under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH•). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low-temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm/V·s for IGZO TFTs and from 2.78 to 7.82 cm/V·s for IZO TFTs, and the V shift caused by positive bias stress and negative bias illumination stress over 1000 s under 5700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.
This work presents a solution processing method of IZO TFTs through photocatalytic reactions of TiO 2 to improve electrical properties. The mobility and on-off current ratio increased from 0.35 to 1.21 cm 2 /Vs and from 10 6 to 10 7 , respectively. By recycling the solution, the possibility of eco-friendly oxide TFTs is demonstrated.
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