International audienceTo assist the development of high quality single crystalline SiC ingot using the top seeded solution growth process, we have implemented a numerical model with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. We also evidence that the carbon solubility in liquid silicon is the actual limiting parameter of the SiC solution growth process. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process
The flow regime around a hexagonal polygon with low Reynolds numbers Re<200 is numerically investigated in two different orientations namely face-oriented and corneroriented. The basic flow characteristics, including drag coefficient, lift coefficient, Strouhal number and critical Reynolds number of the hexagonal cylinders, are calculated using 2D transient numerical analysis. Within the studied range of Re, the predicted lift coefficient and Strouhal number of the face-oriented hexagon were higher than those of the corneroriented hexagon. In contrast, the predicted drag coefficient and critical Reynolds number of the corner-oriented hexagon were greater than those of the face-oriented. Flow characteristics of a novel textured geometry are also studied using 3D transient analysis. The Strouhal number St of the textured geometry was found to be in between the St of both the hexagonal cylinders, and its lift coefficient is lower than that of the hexagonal cylinders.
Besides the seeded sublimation process, which is the current industrial crystal growth process for silicon carbide (SiC), solution growth appears as a possible method for high quality bulk crystals. For a further development of the latter technique, a robust numerical model has been implemented with the aim to give quantitative outcomes in addition to qualitative information. Growth rates have been calculated for three different temperature ranges (1700, 1800 and 1900°C) in pure silicon. The computed values were found to be in good agreement with the experimental ones.
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