Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Lefebure, Julien; Dedulle, Jean-Marc; Ouisse, T.; Chaussende, Didier

doi:10.4028/www.scientific.net/msf.717-720.69

Cited by 2 publications

(2 citation statements)

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“…We did not consider buoyancy convection related to the solutal gradient because the carbon solubility was very small, typically less than 0.1 at% within the temperature range under study [15]. Details of such numerical calculations can be found elsewhere [16,17].…”

Section: Methodsmentioning

confidence: 99%

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

et al. 2022

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Accurate description, understanding and control of the high temperature interface behavior between the SiC single crystal and liquid phase is critical for further development of SiC solution growth. The different parameters which create morphological instabilities, such as step bunching, micro-faceting and solvent trapping, remain unclear because they are very difficult to address in high temperature experiments. We combined experiments and numerical simulation to design a specific sessile drop approach where the liquid is removed before cooling down. The advantage of this method that it activates or suppresses the solute (carbon) transport by an AC magnetic field and thus separates the physical-chemical and hydrodynamic contributions. The method was demonstrated through observation of the morphological evolution of a 4°off 4H-SiC (0001) surface in contact with pure liquid silicon at 1600 °C according to the time factor. Several parasitic effects were also analyzed and suppressed in order to obtain a well-controlled uniform interface.

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Section: Methodsmentioning

confidence: 99%

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

et al. 2022

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“…Growing SiC boules or epitaxial layers form a liquid phase is an old topic which has gained renewed interest recently [1][2][3][4]. For bulk growth, top seeded solution technique (TSSG) is preferred while for epilayers Vapor-Liquid-Solid (VLS) mechanism is more suited due to lower growth rate.…”

Section: Introductionmentioning

confidence: 99%

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

Alassaad

Cauwet

Carole

et al. 2013

MSF

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Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent

Cited by 2 publications

References 5 publications

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

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