Application of degradable organic electronics based on biomaterials, such as polylactic‐co‐glycolic acid and polylactide (PLA), is severely limited by their low thermal stability. Here, a highly thermally stable organic transistor is demonstrated by applying a three‐arm stereocomplex PLA (tascPLA) as dielectric and substrate materials. The resulting flexible transistors are stable up to 200 °C, while devices based on traditional PLA are damaged at 100 °C. Furthermore, charge‐ trapping effect induced by polar groups of the dielectric is also utilized to significantly enhance the temperature sensitivity of the electronic devices. Skin‐like temperature sensor array is successfully demonstrated based on such transistors, which also exhibited good biocompatibility in cytotoxicity measurement. By presenting combined advantages of transparency, flexibility, thermal stability, temperature sensitivity, degradability, and biocompatibility, these organic transistors thus possess a broad applicability such as environment friendly electronics, implantable medical devices, and artificial skin.

Flexible organic phototransistors are fabricated using polylactide (PLA), a polar bio­material, as the dielectric material. The charge trapping effect induced by the polar groups of the PLA layer leads to a photosensitivity close to ≈104. The excellent performance of this new device design is further demonstrated by incorporating the photo­transistors into a sensor array to successfully image a star pattern.

CH3NH3PbI3 perovskite-based optoelectronics have attracted intense research interests recently because of their easy fabrication process and high power conversion efficiency. Herein, we report a novel photodetector based on unique CH3NH3PbI3 perovskite films with island-structured morphology. The light-induced electronic properties of the photodetectors were investigated and compared to those devices based on conventional compact CH3NH3PbI3 films. The island-structured CH3NH3PbI3 photodetectors exhibited a rapid response speed (<50 ms), good stability at a temperature of up to 100 °C, a large photocurrent to dark current ratio (Ilight/Idark > 1 × 10(4) under an incident light of ∼6.59 mW/cm(2), and Ilight/Idark > 1 × 10(2) under low incident light ∼0.018 mW/cm(2)), and excellent reproducibility. Especially, the performance of the island-structured devices markedly exceed that of the conventional compact CH3NH3PbI3 thin-film devices. These excellent performances render the island-structured device to be potentially applicable for a wide range of optoelectronics.

Printable and flexible organic phototransistors (OPTs) make comprehensive requirements for the organic semiconductors (OSCs), including high photosensitivity, decent transistor characteristics, appropriate solution viscosity, and good film flexibility. It has been challenging to obtain such semiconductors. Here, we demonstrated that by taking advantage of the interfacial charge effect, printable and flexible OPTs with high performance can be successfully fabricated through simply blending common OSCs with polymers. Using 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene and an insulating biopolymer polylactide, OPTs with blended and layered structure are both fabricated and investigated. The photoresponses of the OPTs can be modulated by gate voltage over 1000 times, and their responsivities are measured up to 400 A W−1. As compared to the layered OPTs, the blended ones exhibit higher photocurrent to dark current ratio (up to 105) and better light detection limit (lower than 0.02 mW cm−2). The improvements are attributed to larger interfacial area and more intensive charge trapping effect. The flexible OPTs are further fabricated by inkjet printing the blended solution. This work presents OPTs with comprehensive advantages including low cost, enhanced photosensitivity, great flexibility, and printability, which are realized by simply blending common OSC with polymer, and thus provide an inspiration for the design of novel organic electronics.

A significant enhancement of photoresponse from the light-controlled conductive switching based on Cu₂O/rGO nanocomposites was experimentally demonstrated. Cu₂O/rGO nanocomposites were synthesized via a facile wet-reduced method. The crystalline structure, morphologies, and photoluminescence of the Cu₂O/rGO nanocomposites were characterized and analyzed. The fabricated conductive switching was measured under the irradiation of a continuous laser. When the laser was turned on and off alternately, the photoconductive switching obviously displayed a state conversion between "on" and "off" reversibly. Furthermore, the typical current-voltage (I-V) and current-time (I-t) curves exhibited a relatively high switching ratio (I_on/I_off) of 3.25 and a fast response time of 0.45 s. The excellent "on-off" characteristics of the device show promising applications in memory storage and logic circuits.