The objective of this study is to evaluate the effect of hydroxyapatite (HAP) nanoparticles with different surface charges on the cellular uptake behavior and in vitro cell viability and proliferation of MC3T3-E1 cell lines (osteoblast). The nanoparticles surface charge was varied by the surface modification with two carboxylic acids: 12-aminododecanoic acid (positive) and dodecanedioic acid (negative). The untreated HAP nanoparticles and dodecanoic acid modified HAP nanoparticles (neutral) were used as the control. X-ray diffraction (XRD) revealed that surface modifications by the three carboxylic acids did not change the crystal structure of HAP nanoparticles; Fourier transform infrared spectroscopy (FTIR) confirmed the adsorption and binding of the carboxylic acids on HAP nanoparticle surface; and zeta potential measurement confirmed that the chemicals successfully modified the surface charge of HAP nanoparticles in water based solution. Transmission electron microscopy (TEM) images showed that positively charged, negatively charged and untreated HAP nanoparticles, with similar size and shape, all penetrated into the cells and cells had more uptake of HAP nanoparticles with positive charge compared to those with negative charge, which might be attributed to the attractive or repulsive interaction between the negatively charged cell membrane and positively/negatively charged HAP nanoparticles. The neutral HAP nanoparticles could not penetrate cell membrane due to the larger size. MTT assay and LDH assay results indicated that as compared with the polystyrene control, greater cell viability and cell proliferation were measured on MC3T3-E1 cells treated with the three kinds of the HAP nanoparticles (neutral, positive, and untreated), among which positively charged HAP nanoparticles shows strongest improvement for cell viability and cell proliferation. In summary, the surface charge of HAP nanoparticles can be modified to influence the cellular uptake of HAP nanoparticles and the different uptake also influence the behavior of cells. These in-vitro results may also provide useful information for investigations of HAP nanoparticles applications in the gene delivery and intracellular drug delivery.
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (0001) faces of 4H-and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm 2 V -1 s -1 on the (0001) face and ~5,800 cm 2 V -1 s -1 on the (0001) face.
A technique enabling the detection and quantification of low density sites on planar SiO2 surfaces is demonstrated. Fluorescent probes are used to titrate free hydroxyl and strained siloxane sites on the surface of amorphous SiO2 substrates in vacuum. The titration of free hydroxyl sites was performed to validate the method and to provide a reference for the measurement of the strained siloxane site density. Perylene derivatives with different functional groups are chemisorbed onto the surface sites, enabling in situ photoluminescence (PL) measurements of the bound fluorophores. An amine functional group is used to selectively titrate strained siloxane sites, while an alcohol group is used for the titration of free hydroxyl sites. Emission intensity was found to be nonlinear with coverage for bound fluorophore densities greater than 0.1 nm(-2), necessitating the removal of molecules from the surface into a solution to obtain accurate density measurements. For lower densities, the coverage of bound fluorophores can be estimated directly from in situ PL measurements. The measured areal densities of bound fluorophores after titrating free hydroxyl sites are in good agreement with literature values for the densities of such sites on high surface area silica. PL measurements of SiO2 surfaces titrated with an amine derivative of perylene indicate that strained siloxane sites exist for vacuum pretreatment temperatures of 300 °C and increase with increasing pretreatment temperature. Densities of strained siloxane sites on the silica surface are estimated at 0.004-0.02 nm(-2) for pretreatment temperatures of 300-700 °C, demonstrating the sensitivity of this technique.
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis substrates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; surface steps were up to 15 nm high and the uni-form step morphology was sometimes lost. Mobilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 m square) samples are presented and shown to compare favorably to recent reports.
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