Hall effect mobility of epitaxial graphene grown on silicon carbide

Abstract

Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (0001) faces of 4H-and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm 2 V -1 s -1 on the (0001) face and ~5,800 cm 2 V -1 s -1 on the (0001) face.

Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics

“…Furthermore, the average Hall mobility was about 450 cm 2 /(V s) with an electron concentration 1.5×10 13 cm 2 measured at room temperature on a circular area with a diameter of 2.3 cm. The mobility is near that reported for small-sized devices on EG grown on SiC with the same carrier concentrations [26] and comparable to the recently reported results for wafer-scale graphene grown on SiC by CVD [14] with similar carrier concentration.…”

Ferromagnetism in ABC-stacked trilayer graphene

“…[2][3][4][5][6][7] Early on, it was realized that stacked graphene layers behave differently than both a single layer and 3D graphite. For example, in bilayer graphene the dispersion is quadratic instead of linear and the electrons behave as massive chiral particles, which is a completely new type of particle.…”

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

“…Graphene grown on the C-face of 4H-and 6H-SiC (000-1) (C-face graphene) exhibits typically high mobility parameters (l > 18 000 cm 2 V À1 s À1 at room temperature). 1,2 Consequently, C-face graphene on the hexagonal SiC polytypes has been a subject of extensive investigations with the prospect of achieving material with transport properties similar to those of exfoliated graphene. [1][2][3][4][5] C-face graphene grows typically in the form of few-layerthick regions with different numbers of graphene layers.…”

“…1,2 Consequently, C-face graphene on the hexagonal SiC polytypes has been a subject of extensive investigations with the prospect of achieving material with transport properties similar to those of exfoliated graphene. [1][2][3][4][5] C-face graphene grows typically in the form of few-layerthick regions with different numbers of graphene layers. The high mobility parameters of C-face graphene have been attributed to a weak interaction of few layer graphene (FLG) with the substrate and a decoupling between the individual sheets in the stack, i.e., C-face FLG shows a single p-band in similarity to single layer graphene (SLG).…”