Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics

Jia, Yuping; Guo, Liwei; Lin, Jingjing; Chen, Lianlian; Chen, Xiaolong

doi:10.1007/s11434-012-5161-8

Cited by 9 publications

(4 citation statements)

References 27 publications

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“…Since the graphene substrates used for MBE experiments should be uniform and single-crystalline across the surface, monolayer or bilayer graphene, epitaxially grown on the surface of Si-terminated 6H-SiC(0001) substrates were used. There are three approaches to prepare the graphene/SiC substrates: (i) annealing SiC in an H 2 /Ar gas mixture; 101 (ii) annealing doped SiC in an ultra-high vacuum environment by passing direct current through the substrate in a Si molecular flux; 102 (iii) flash annealing SiC in ultra-high vacuum by direct current heating. 103 A full coverage of graphene on the substrate surface is essential for obtaining monolayer nanosheets.…”

Section: Mbe Growth Of Snte and Pbte Monolayersmentioning

confidence: 99%

Experimental formation of monolayer group-IV monochalcogenides

Chang,

Parkin

2020

Preprint

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Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.

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Section: Mbe Growth Of Snte and Pbte Monolayersmentioning

confidence: 99%

Experimental formation of monolayer group-IV monochalcogenides

Chang,

Parkin

2020

Preprint

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“…The details for fabrication of EGs were described in our previous work. 13 Here, three typical EG samples grown on the above mentioned SiC substrates were analyzed. The layer numbers of the EGs were estimated to be about 5-6 on SiC ð11 20Þ and ð10 10Þ, and 2-3 on SiC ð0001Þ, respectively, inferred from the intensity ratio of the G peak and the SiC signal in Raman scattering spectra.…”

Section: Identification Of Dominant Scattering Mechanism In Epitaxialmentioning

confidence: 99%

Identification of dominant scattering mechanism in epitaxial graphene on SiC

Lin

Guo

Jia

et al. 2014

Applied Physics Letters

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A scheme of identification of scattering mechanisms in epitaxial graphene (EG) on SiC substrate is developed and applied to three EG samples grown on SiC (0001), (112¯0), and (101¯0) substrates. Hall measurements combined with defect detection technique enable us to evaluate the individual contributions to the carrier scatterings by defects and by substrates. It is found that the dominant scatterings can be due to either substrate or defects, dependent on the substrate orientations. The EG on SiC (112¯0) exhibits a better control over the two major scattering mechanisms and achieves the highest mobility even with a high carrier concentration, promising for high performance graphene-based electronic devices. The method developed here will shed light on major aspects in governing carrier transport in EG to harness it effectively.

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“…For the subsequent use of electronic devices, the scale of graphene is an important parameter. However, previous researches manly concentrated on thermal decomposition of SiC pieces around 10×10mm 2 magnitude, few studies have been done on macroscopic scale epitaxial graphene [2,3]. Therefore, uncertainties still exist in the large wafer scale fabrication of graphene on SiC.…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Graphene on 4-Inch SiC

Chen

et al. 2016

MSF

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Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a conventional physical vapor transport (PVT) growth system. Atmospheric pressure graphitization and a “face-down” orientation were account for the high uniformity of graphene. Atomic force microscopy, electrostatic force microscopy and Raman spectroscopy were used to confirm the uniformity of surface morphology and layer number. Electrical properties were also characterized by Hall measurements on 15×15mm2 samples sawed from the wafer. An average Hall mobility of about 2000cm2/Vs was obtained.

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Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics

Cited by 9 publications

References 27 publications

Experimental formation of monolayer group-IV monochalcogenides

Experimental formation of monolayer group-IV monochalcogenides

Identification of dominant scattering mechanism in epitaxial graphene on SiC

Wafer-Scale Graphene on 4-Inch SiC

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