In the present work, non-stoichiometric silicon oxide films (SiOx) deposited using a hot filament chemical vapor deposition technique at short time and simple parameters of depositions are reported. This is motivated by the numerous potential applications of SiOx films in areas such as optoelectronics. SiOx films were characterized with different spectroscopic techniques. The deposited films have interesting characteristics such as the presence of silicon nanoclusters without applying thermal annealing, in addition to a strong photoluminescence after applying thermal annealing in the vicinity of 1.5 eV, which may be attributed to the presence of small, oxidized silicon grains (less than 2 nm) or silicon nanocrystals (Si-nc). An interesting correlation was found between oxygen content, the presence of hydrogen, and the formation of defects in the material, with parameters such as the band gap and the Urbach energies. This correlation is interesting in the development of band gap engineering for this material for applications in photonic devices.

This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment.

In this work, a novel route is discussed to produce in one step ZnO/Burkeite powders by the modified solution combustion method. The ZnO particles enhance the photocatalytic activity in the degradation of Rhodamine B, in which Burkeite mineral acts as a support due to the pH-dependent morphology of the particle aggregates of the as-synthesized powders. The X-ray diffraction (XRD) characterization shows the presence of a heterostructure: ZnO/Burkeite. The Scanning Electron Microscopy (SEM) image shows a morphological dependence with the pH of the solution used for the synthesis. The results show that the system with the highest degradation (92.4%) corresponds to the case in which ZnO/Burkeite heterostructure was synthesized with a pH 11.

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Density functional theory and molecular dynamics (MD) calculations were used to evaluate electronic structure properties in a series of nanotubes with smallest possible diameters (both types: armchair and zigzag), and the corresponding chiral nanotubes (8,m) for 0 ≤ m ≤ 8. The calculations were performed considering a length of 16.5 Å. We evaluated a set of 26 combinations of dual nanotubes (armchair/armchair, zigzag/zigzag, armchair/zigzag, and zigzag/armchair), where the first label corresponds to the outer tube. We extended our study with nine additional systems of double-walled carbon nanotubes (DWCNT) with semiconductor nature. In this regard, we gave insight into the semiconductive or metallic nature inherited to the dual tubes. DWCNT systems were possible to construct by maintaining a radial distance of 3.392 Å for the armchair/armchair arrangement and 3.526 Å for the zigzag/zigzag type. It was considered as a reference, the interplanar distance of graphite (3.350 Å). Electronic transport calculations were also performed on selected DWCNT systems in order to understand the role played by the different symmetries under study. It was evidenced that the electronic structure nature of the systems rules the ability to transport electrons through the DWCNT interface. K E Y W O R D S DFT, DWCNT, electron transmission, energy storage, molecular dynamics 1 | INTRODUCTION Although some experimental efforts have been performed to understand the influence of shells in the electronic structure and electronic transport properties of double-walled carbon nanotubes (DWCNT), a systematic theoretical study to elucidate the relations among the morphology of the single-walled carbon nanotubes (SWCNT) components of DWCNT systems and the electronic transport through the assembled shells are not available in open literature.The study of SWCNT and multi-walled carbon nanotubes (MWCNT) has experienced an outstanding growth in the last decades as possible candidates for a wide range of applications due to their unique electrical, mechanical, and thermal properties. The electronic properties of carbon nanotubes (CNT) are remarkable and they have received great attention. For instance, due to the quantum confinement of the electrons in the circumferential direction, a SWCNT can be either metallic or semiconducting, depending on its geometry, which strongly depends on its chiral

In this work, we report how manganese phthalocyanine (MnPc) films obtained using the ultrasonic spray–pyrolysis technique at 40 °C deposited on glass substrate subjected to thermal annealing at 100 °C and 120 °C. The MnPc films were characterized using UV/Vis spectroscopy, Raman spectroscopy, X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM). The absorption spectra of the MnPc films were studied in a wavelength range from 200 to 850 nm, where the characteristic bands of a metallic phthalocyanine known as B and Q bands were observed in this range of the spectrum. The optical energy band (Eg) was calculated using the Tauc equation. It was found that, for these MnPc films, the Eg has the values of 4.41, 4.46, and 3.58 eV corresponded to when they were deposited, annealing at 100 °C and 120 °C, respectively. The Raman spectra of the films showed the characteristic vibrational modes of the MnPc films. In the X-Ray diffractograms of these films, the characteristic diffraction peaks of a metallic phthalocyanine are observed, presenting a monoclinic phase. The SEM images of these films were studied in a cross-section obtaining thicknesses of 2 μm for the deposited film and 1.2 μm and 0.3 μm for the annealed films at 100 °C and 120 °C. Additionally, in the SEM images of these films, average particle sizes ranging from 4 to 0.041 µm were obtained. The results agree with those reported in the literature for MnPc films deposited by performing other techniques.

In this work, hybrid structures formed by nanostructured layers, which contain materials, such as porous silicon (PSi), carbon nanotubes (CNTs), graphene oxide (GO), and silicon-rich oxide (SRO), were studied. The PSi layers were obtained by electrochemical etching over which CNTs and GO were deposited by spin coating. In addition, SRO layers, in which silicon nanocrystals are embedded, were obtained by hot filament chemical vapor deposition (HFCVD) technique. Photoluminescence (PL) spectra were obtained from the hybrid structures with which a comparative analysis was completed among different PL ones. The SRO layers were used to confine the CNTs and GO. The main purpose of making these hybrid structures is to modulate their PL response and obtain different emission energy regions in the PL response. It was found that the PL spectra of the CNTs/SRO and GO/SRO structures exhibit a shift towards high energies compared to those obtained from the PSi layers; likewise, the PSi/CNTs/SRO and PSi/GO/SRO structures show a similar behavior. To identify the different emission mechanisms originated by PSi, GO, CNTs, and SRO, the PL spectra were deconvolved. It was found that the Psi/CNTs/SRO and Psi/GO/SRO structures exhibit a PL shift in respect to the PSi layers, for this reason, the modulation of the PL emission of the structures makes these hybrid structures promising candidates to be applied in the field of photonic and electroluminescent devices.

MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of −4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 μA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-λ) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 × 1011 cm Hz1/2 W−1, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.