We propose an implementation of a singlet-only spin qubit in a GaAs-based triple quantum dot with a (1,4,1) charge occupation. In the central multi-electron dot, the interplay between Coulomb interaction and an out-of-plane magnetic field creates an energy spectrum with a tunable singlettriplet splitting, which can be exploited to create a six-particle singlet-only qubit with a qubit splitting that can straightforwardly be tuned over tens of µeV by adjusting the external magnetic field. We confirm the full exchange-based electric control of the qubit and demonstrate its superior coherence properties due to its singlet-only nature. arXiv:1911.08345v1 [cond-mat.mes-hall]
Spin-orbit interaction (SOI) plays a fundamental role in many low-dimensional semiconductor and hybrid quantum devices. In the rapidly evolving field of semiconductor spin qubits, SOI is an essential ingredient that can allow for ultrafast qubit control. The exact manifestation of SOI in a given device is, however, often both hard to predict theoretically and probe experimentally. Here, we develop a detailed theoretical connection between the leakage current through a double quantum dot in Pauli spin blockade and the underlying SOI in the system. We present a general analytic expression for the leakage current, which allows to connect experimentally observable features to both the magnitude and orientation of the effective spin-orbit field acting on the moving carriers. Motivated by the large recent interest in hole-based quantum devices, we further zoom in on the case of Pauli blockade of hole spins, assuming a strong transverse confinement potential. In this limit we also find an analytic expression for the current at low external magnetic field, that includes the effect of hyperfine coupling of the hole spins to randomly fluctuating nuclear spin baths. This result can be used to extract detailed information about both hyperfine and spin-orbit coupling parameters for hole spins in devices with a significant fraction of non-zero nuclear spins.
Qubits encoded in the spin state of heavy holes confined in Si-and Ge-based semiconductor quantum dots are currently leading the efforts toward spin-based quantum information processing. The virtual absence of spinful nuclei in purified samples yields long qubit coherence times and the intricate coupling between spin and momentum in the valence band can provide very fast spinorbit-based qubit control, e.g., via electrically induced modulations of the heavy-hole g-tensor. A thorough understanding of all aspects of the interplay between spin-orbit coupling, the confining potentials, and applied magnetic fields is thus quintessential for the development of the optimal hole-spin-based qubit platform. Here we theoretically investigate the manifestation of the effective g-tensor and effective mass of heavy holes in two-dimensional hole gases as well as in lateral quantum dots. We include the effects of the anisotropy of the effective Luttinger Hamiltonian (particularly relevant for Si-based systems) and we focus on the detailed role of the orientation of the transverse confining potential. We derive most general analytic expressions for the anisotropic g-tensor and we present a general and straightforward way to calculate corrections to this g-tensor for localized holes due to various types of spin-orbit interaction, exemplifying the approach by including a simple linear Rashba-like term. Our results thus contribute to the understanding needed to find optimal points in parameter space for hole-spin qubits, where confinement is effective and spin-orbit-mediated electric control over the spin states is efficient.
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