Probing details of spin-orbit coupling through Pauli spin blockade

Qvist, Jørgen Holme; Danon, Jeroen

doi:10.1103/physrevb.106.235312

Cited by 3 publications

(1 citation statement)

References 68 publications

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“…On the one hand, within the spin‐blockade regime, the SOC‐induced spin mixing leads to leakage currents through the DQD. [ 104,105 ] On the other hand, the SOC introduces anisotropic exchange interactions for both electron and hole qubits, which are at the heart of two‐qubit quantum gates. For electron qubits, anisotropic exchange only occurs in a finite magnetic field.…”

Section: Microscopic Physics Of Semiconductor Nanostructuresmentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Section: Microscopic Physics Of Semiconductor Nanostructuresmentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Zhou,

Leng,

Wang

et al. 2024

Nano Lett.

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Quantum interference is a natural consequence of wave-particle duality in quantum mechanics, and is widely observed at the atomic scale. One interesting manifestation of quantum interference is coherent population trapping (CPT), first proposed in three-level driven atomic systems and observed in quantum optical experiments. Here, we demonstrate CPT in a gate-defined semiconductor double quantum dot (DQD), with some unique twists as compared to the atomic systems. Specifically, we observe CPT in both driven and nondriven situations. We further show that CPT in a driven DQD could be used to generate adiabatic state transfer. Moreover, our experiment reveals a nontrivial modulation to the CPT caused by the longitudinal driving field, yielding an odd–even effect and a tunable CPT. Our results broaden the field of CPT, and open up the possibility of quantum simulation and quantum computation based on adiabatic passage in quantum dot systems.

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