This paper describes the micromachined piezoelectric microspeakers that can produce the audible signal with 20 V peak-to-peak input voltages. The diaphragm size is 4 × 4 mm 2 and the thickness of diaphragm is around 1 micron meter except partially etched piezoelectric area. The maximum sound output pressure of the microspeaker is even higher than ever before with a small diaphragm in high frequency range around 10 kHz. This successful result bases upon using high quality AlN thin film. The deposited AlN thin film shows c-axis oriented columnar structure and very fine grains. The highest SPL (Sound Pressure Level) measured from 300 Hz to 12 kHz shows about 100 dB around 10 kHz in case of circular type microspeaker and about 76 dB in case of cross type, respectively.
Field‐effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer‐aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.
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