The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as SnS, SnSe, and InSe, to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the SnS, SnSe, and InSe ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm/(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Chalco-gel–based metal-chalcogenide semiconductors and scalable high-performance electronic devices were demonstrated.

Self-crosslinking polymerization between Sn2S64− clusters resulted transition metal free chalcogel with local coordination control and effective Cs+ remediation functionality.

Especially, colloidal lead halide perovskite quantum dots have been recently proven to be an excellent luminescent materials with nearly ideal efficiency. [4] Furthermore, other important kind of materials such as nontoxic I-III-VI systems are also emerged as important classes of quantum dot emitters. [5,6] Owing to these unique features, QDs have been studied for their use in a variety of industrial and scientific applications, including photodetectors, thin-film transistors (TFTs), photovoltaics, and lightemitting diodes (LEDs). [7][8][9][10][11][12] More recently, colloidal QDs that can be synthesized and processed using a simple solution process have received significant attention, particularly in large area and high performance optoelectronic applications. Among these, QD-based LED (QLED) displays have been developed. These devices offer advantages over conventional organic LED displays due to their wide tunable color range, high color purity, and environmental stability. In achieving full color large-area QLED displays, an efficient high-resolution patterning technology remains a critical challenge. Research during the last decade has provided significant progress on patterning issues by employing several innovative methods including imprinting, [13][14][15] photolithography, [16,17] and inkjet printing. [18,19] Among these diverse methods, inkjet and contact printing [20] can pattern high-density multicolor QD devices with moderate accuracy and efficiency. These promising approaches facilitated the development of high-resolution QDrelated electronic devices. However, their limited uniformity over the deposited area combined with the difficulty of performing large-area fabrication has limited the development of efficient manufacturing processes. Although previous photolithographyrelated approaches [16,17] have partially resolved the scaling and uniformity issues, they still require highly complicated device architectures and harsh fabrication processes that use organic solvents that may be detrimental to QD performance. Moreover, some repeated patterning technologies that employ additional relief processes [17] may not be compatible with efficient semiconductor manufacturing processes. Therefore, the development of new materials, devices, and fabrication technologies for efficient high-resolution and large-area patterning of QD devices is required in order to achieve the widespread adoption of QDrelated applications.Quantum dot (QD) light-emitting diodes have been intensively investigated as a future display technology owing to their outstanding optoelectronic properties such as narrow spectral bandwidths and high quantum efficiencies. Significant efforts have been made to achieve full color QD light-emitting diodes (QLEDs) by applying various fine-patterning technologies to active QD layers. However, the reported patterning methods generally require high processing cost and complex facilities which have limited their wide adoption in industrial-scale display applications. In this study, a fine patterning m...

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