Surfaceenhanced Raman scattering (SERS) of thiourea [SC(NH,),] was studied in acidic solutions of 0.1 M H,SO, and 0.1 M HCI. Very strong SERS bands of thiourea were observed in the acidic solutions, in contrast to very weak SERS spectra of thiourea in standard SERS solutions employing K,SO, or KCI. Thiourea seems to have a strong and stable surface adsorption at a silver electrode in the acidic solutions where protonation and anionic co-adsorption may enhance this surface stability of thiourea.
Raman scattering application was introduced to directly probe the depth profile of structural changes in a very thin surface layer of F+-implanted Si by use of a single Ar+ laser (488 nm) excitation. The results of Raman scattering and sheet resistance measurement showed an unusual annealing behavior of the F+-implanted Si:In the range of annealing temperature Ta from 200 °C to 400 °C, disordering was observed to increase with increasing Ta but a stronger trend of ordering with Ta increasing further above 400 °C. This abnormal behavior could be explained as due to competition between the ordering effect of thermal annealing with increasing Ta and the disordering effect of the implanted fluorine ions randomly breaking the Si–Si crystal bonds in the surface diffusion layer.
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