High-definition red/green/blue (RGB) pixels and deformable form factors are essential for the next-generation advanced displays. Here, we present ultrahigh-resolution full-color perovskite nanocrystal (PeNC) patterning for ultrathin wearable displays. Double-layer transfer printing of the PeNC and organic charge transport layers is developed, which prevents internal cracking of the PeNC film during the transfer printing process. This results in RGB pixelated PeNC patterns of 2550 pixels per inch (PPI) and monochromic patterns of 33,000 line pairs per inch with 100% transfer yield. The perovskite light-emitting diodes (PeLEDs) with transfer-printed active layers exhibit outstanding electroluminescence characteristics with remarkable external quantum efficiencies (15.3, 14.8, and 2.5% for red, green, and blue, respectively), which are high compared to the printed PeLEDs reported to date. Furthermore, double-layer transfer printing enables the fabrication of ultrathin multicolor PeLEDs that can operate on curvilinear surfaces, including human skin, under various mechanical deformations. These results highlight that PeLEDs are promising for high-definition full-color wearable displays.
With the advance in information technologies involving
machine
vision applications, the demand for energy- and time-efficient acquisition,
transfer, and processing of a large amount of image data has rapidly
increased. However, current architectures of the machine vision system
have inherent limitations in terms of power consumption and data latency
owing to the physical isolation of image sensors and processors. Meanwhile,
synaptic optoelectronic devices that exhibit photoresponse similar
to the behaviors of the human synapse enable in-sensor preprocessing,
which makes the front-end part of the image recognition process more
efficient. Herein, we review recent progress in the development of
synaptic optoelectronic devices using functional nanomaterials and
their unique interfacial characteristics. First, we provide an overview
of representative functional nanomaterials and device configurations
for the synaptic optoelectronic devices. Then, we discuss the underlying
physics of each nanomaterial in the synaptic optoelectronic device
and explain related device characteristics that allow for the in-sensor
preprocessing. We also discuss advantages achieved by the application
of the synaptic optoelectronic devices to image preprocessing, such
as contrast enhancement and image filtering. Finally, we conclude
this review and present a short prospect.
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