In the interest of improving crystalline quality and optical performance of MOCVD grown semiconductors a unique superatmospheric reactor was designed and fabricated. This reactor has since been used to fabricate GaN/InGaN multi-quantum-well heterostructures under superatmospheric growth conditions. The resulting samples were analyzed through in-situ and ex-situ measurements.
A method for the characterization of multiple quantum well (MQW) light emitting diodes(LEDs) is investigated. This method involves taking the I-V curve of the LED while it is irradiated with photons near the absorption edge of the quantum wells within the device under test. A number of features are observed on the I-V curve corresponding to spatial variations within the LED heterostructure. The physical origin of these features and their utility in analysis of the internal structure are discussed.
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