Analysis of InGaN/GaN Multiple Quantum Well Heterostructures by Means of Photoconductivity Measurements

Abstract

A method for the characterization of multiple quantum well (MQW) light emitting diodes(LEDs) is investigated. This method involves taking the I-V curve of the LED while it is irradiated with photons near the absorption edge of the quantum wells within the device under test. A number of features are observed on the I-V curve corresponding to spatial variations within the LED heterostructure. The physical origin of these features and their utility in analysis of the internal structure are discussed.