Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin–orbit torque (SOT) devices, a fundamental question arises: how can the symmetry of the perpendicular magnetic moment be broken by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the antisymmetric Dzyaloshinskii–Moriya interaction (DMI) can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, the dynamic noncollinear spin textures are formed under the current-driven SOT, and thus, the chiral symmetry of these dynamic spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties as a practical solution for the wafer-scale manufacture of SOT devices.
Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θSH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.
We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric [Pb(Mg1/3Nb2/3)O3](1-x) -[PbTiO3]x (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni thin film. The strain field induced by applying DC voltage to PMN-PT substrate leads to a down shift of PSSW mode frequency owing to the magneto-elastic effect in Ni, and corresponding changes in the spin wave resonance conditions. The observed non-monotonic dependence of the PSSW frequency on DC voltage is related to an abrupt change of the pinning parameter at certain values of the voltage. The obtained results are important for understanding the thermal magnon spectrum in ferromagnetic films and development of the low-power spin-wave devices.
Artificial intelligence frameworks utilizing unsupervised learning techniques can avoid the bottleneck of labeled training data required in supervised machine learning systems, but the programming time of these systems is inherently limited by their hardware implementations. Here, a finite-element model coupling micromagnetics and dynamic strain is used to investigate a multiferroic antiferromagnet as a high-speed artificial synapse in artificial intelligence applications. The stability of strain-induced intermediate antiferromagnetic magnetization states (non-uniform magnetization states between a uniform 0 or 1), along with the minimum time scale at which these states can be programmed is investigated. Results show that due to the antiferromagnetic material's magnetocrystalline anisotropy, two intermediate states (Néel vector 1/3z, 2/3x, and Néel vector 2/3z, 1/3x) between fully x and fully z Néel vector orientations can be successfully programmed using 375 με strain pulses, and that the time associated with this programming is limited to ∼0.3 ns by the material's antiferromagnetic resonance frequency.
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