Articles you may be interested inTemperature rise induced by a cw laser beam revisited J. Appl. Phys. 57, 5123 (1985); 10.1063/1.335245 Nonlinear calculation of a temperature profile produced in a twolayer structure by a scanning cw elliptical laser or electron beam J. Appl. Phys. 57, 965 (1985); 10.1063/1.334698 Erratum: Temperature profiles induced by a scanning cw laser beam [J. Appl. Phys. 5 3, 4364 (1982)] J.Temperature evolutions in silicon induced by a scanned cw laser, pulsed laser, or an electron beam Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam We present calculations of the temperature profiles induced by a moving cw elliptical laser beam with a Gaussian intensity distribution in a semi-infinite material. Temperature-dependent thermal diffusivity, conductivity, and surface reflectivity are incorporated in our model, and some aspects of melting are discussed. As an example, we apply the calculations to silicon. For a comparison of stationary elliptical spots of varying eccentricities, we present materialindependent normalized linear temperature profiles. We find that highly elliptical beams can be used to rapidly scan and anneal large areas.
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