Erratum: Temperature profiles induced by a scanning cw laser beam [J. Appl. Phys. <b>5</b>
                  <b>3</b>, 4364 (1982)]

Moody, John; Hendel, R.

doi:10.1063/1.332837

Cited by 13 publications

(18 citation statements)

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“…An upper limit to the temperature rise at the surface is calculated to be 43° at 6 W, assuming inefficient heat sinking by the sapphire sample mount. 16 This is supported by measurements with a thermocouple. It is clear that neither product is in thermal equilibrium with the other or with the substrate.…”

Section: MLmentioning

confidence: 71%

Photostimulated desorption in laser-assisted etching of silicon

1988

Phys. Rev. Lett.

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Photodesorption of SiF3 groups, which are the principal adsorbates on a silicon surface during etching by XeF2, is found to be responsible for the etch-rate enhancement observed under illumination by lowpower, cw band-gap radiation. It is proposed that desorption is stimulated by a photogenerated-chargecarrier-mediated chemical reaction, and not the simple charge trapping and recombination mechanism usually invoked for desorption from semiconductor surfaces. 73.25.+i, 82.65.My When surface reactions produce volatile products, particularly under bombardment by energetic particles such as photons, it can be difficult to identify the role of radiation in the promotion of both reaction and desorption steps. This is particularly so when pulsed lasers are involved, since steep temporal and spatial gradients in temperatures 1 and collisions above the surface 2 can complicate the identification of intrinsic surface-photochemical and surface-physical processes tremendously. Despite the complexities, it has been learned that substrate excitations, direct and indirect, are central to reaction and desorption whether pulsed or continuous light sources are used. Resonant photodesorption occurs when a specific transition of an adsorbed species is excited with sufficient energy to result in desorption after the energy has been delocalized to vibrations of atoms involved in bonding to the substrate, 3 and to the substrate itself. Photodesorption also occurs as a result of substrate heating, 1,a as well as much lower levels of phonon excitation. 4 Substrate electronic excitations by x rays or high-energy electrons are known to lead to desorption via electronic transitions of adsorbates to states which are not strongly bonded to the surface. 5 Desorption induced by valence-band electron-hole pair excitations in semiconductors, of specific interest in this work, has not been as well studied. Desorption of NO from Si (Ref. 6) and CO2 from metal-oxide surfaces 7,8 by low-power, cw band-gap radiation has been ascribed to trapping of photogenerated charge carriers, thus weakening surface bonding. Subband-gap extrinsic excitations may also be quite important, particularly at photon energies near the desorption threshold. 9,10 Desorption is not always the only process stimulated by the laser, and the interplay of carrier-induced chemical reaction and desorption, explored for two systems, NO (Ref. 6) and XeF2 (Ref. 11) on silicon, is particularly interesting. Dissociation and desorption of molecularly adsorbed NO both occur under illumination, appearing to be independent, competing channels. Photoreaction and desorption are tightly coupled in the XeF2-Si system, however, and it is the nature of that coupling which is discussed in this Letter.XeF2 reacts spontaneously with silicon in the dark, first forming a thick (10-20 A) layer whose main component is SiF3, 12 then volatile products, chiefly SiF4 but also including SiF3 under certain conditions. 13 Illumination of this surface with low-power, cw 515-nm light enhances the etch rate by...

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Section: MLmentioning

confidence: 71%

Photostimulated desorption in laser-assisted etching of silicon

1988

Phys. Rev. Lett.

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“…For a given laser source with constant power, constant wavelength and constant beam waist, the bringing energy in one point is directly linked to the scan velocity and the illuminated material properties through the attenuation length (γ). [14,15,16]. It is demonstrated that it exists for each material a critical scan velocity below which the temperature variations reach at a maximum.…”

Section: Optimal Configurationmentioning

confidence: 96%

Dynamic Thermal Laser Stimulation Theory and Applications

Sanchez

Desplats

Beaudoin

et al. 2006

2006 IEEE International Reliability Physics Symposium Proceedings

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Thermal Laser Stimulation (TLS) techniques have demonstrated their ability to detect and locate defects in integrated circuits (IC). Optical Beam Induced Resistance Change (OBIRCH) and all derivatives are based on the same physical principle: local laser heating of integrated circuits.The purpose of this paper is to synthesize the extensive work done in this area in order to highlight the essential physical principles. With this knowledge Dynamic Thermal Laser Stimulation (D-TLS) applications can then be tackled, optimizing parameters such as laser dwell time for sufficient heating. Finally, applications will be presented on 180nm, 120nm and 90nm, comparing the sensitivity of Dynamic Thermal Laser Stimulation with respect to light emission.

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“…Thus, an analytical solution of the transient heat conduction equation with a moving Gaussian heat source, given by Eq. (4) [9] has been used to calculate the liquidus isotherm.…”

Section: Mathematical Modelmentioning

confidence: 99%

Estimation of Average Spot Diameter and Bead Penetration Using Process Model During Electron Beam Welding of AISI 304 Stainless Steel

Kar

Mahanty

Roy

et al. 2015

Trans Indian Inst Met

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A mathematical model based on macroscopic heat balance for surface ablation phenomenon and analytical temperature profile below the vapor cavity, has been developed to estimate the average effective spot diameter and predict depth of bead penetration as a function of the processing parameters during electron beam welding of AISI 304 stainless steel. The average beam spot diameter on the work piece surface has been estimated by minimizing the difference between the model prediction and experimental depth of bead penetration. Present experimental data and data from relevant literature have been used to obtain the correlations for beam spot diameter as a function of heat input (i.e. energy input per unit length). Subsequently, a close agreement between the predicted and experimental bead depths is observed.

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Erratum: Temperature profiles induced by a scanning cw laser beam [J. Appl. Phys. 5 3, 4364 (1982)]

Cited by 13 publications

References 0 publications

Photostimulated desorption in laser-assisted etching of silicon

Photostimulated desorption in laser-assisted etching of silicon

Dynamic Thermal Laser Stimulation Theory and Applications

Estimation of Average Spot Diameter and Bead Penetration Using Process Model During Electron Beam Welding of AISI 304 Stainless Steel

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