Western attempts to obtain Chinese compliance with intellectual property rights have a long history of failure. Most discussions of the problem focus on either legal comparisons or explanations arising from levels of economic development (based primarily on the example of U.S. disregard for such rights during the 18th and 19th centuries). After decades of heated negotiation, intellectual property rights is still one of the major issues of misunderstanding between the West and the various Chinese political entities. This paper examines the sources of this problem from the standpoint of traditional Chinese social and political philosophy (specifically Neo-Confucianism). It points out that the basic assumptions about the nature of intellectual property, which arose during the 17th and 18th centuries in Europe, are fundamentally at odds with the traditional Chinese view of the role of intellectuals in society. It suggests that policies which do not take these differences into account, but which attempt to transfer Western legal concepts without the underlying social constructs are responsible for much of the lack of success in the area of intellectual property rights. Copyright Springer Science+Business Media, Inc. 2006China, intellectual property rights, Neo-Confucianism, confucian ethics, Chinese ethics, copyright,
This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance verticalcavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structureis shown to meet or exceed performance and producibility requirements. These include >99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a >100-nm range. Recent progress in device performance [low threshold voltage (Vh 1.53 V); threshold current (Ith = 0.68 mA); continuous wave (CW) power (P = 59 mW); maximum and minimum CW lasing temperature (T = 200°C, 10 K; and wall-plug efficiencies (r =28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single-mode VCSELs.
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