During the last decades, focused electron beam induced deposition (FEBID) has become a successful approach for direct-write fabrication of nanodevices. Such a deposition technique relies on the precursor supply to the sample surface which is typically accomplished by a gas injection system using a tube-shaped injector nozzle. This precursor injection strategy implies a position-dependent concentration gradient on the surface, which affects the geometry and chemistry of the final nanodeposit. Although simulations already proposed the local distribution of nozzle-borne gas molecules impinging on the surface, this isolated step in the FEBID process has never been experimentally measured yet. This work experimentally investigates the local distribution of impinging gas molecules on the sample plane, isolating the direct impingement component from surface diffusion or precursor depletion by deposition. The experimental setup used in this work maps and quantifies the local impinging rate of argon gas over the sample plane. This setup simulates the identical conditions for a precursor molecule during FEBID. Argon gas was locally collected with a sniffer tube, which is directly connected to a residual gas analyzer for quantification. The measured distribution of impinging gas molecules showed a strong position dependence. Indeed, a 300-lm shift of the deposition area to a position further away from the impingement center spot resulted in a 50 % decrease in the precursor impinging rate on the surface area. With the same parameters, the precursor distribution was also simulated by a Monte Carlo software by Friedli and Utke and showed a good correlation between the empirical and the simulated precursor distribution. The results hereby presented underline the importance of controlling the local precursor flux conditions in order to obtain reproducible and comparable deposition results in FEBID.
a b s t r a c tFocused electron beam induced etching (FEBIE) with chlorine as etching agent has been used to geometrically shape and to electrically modify semiconductor nanodevices. Selected sections of monocrystalline nanowires were modified directly without the requirement for a photomask or a resist layer. FEBIE as a subtractive nanofabrication technology allows to locally etch active semiconductor devices made of Si or Ge. In this work, chlorine is used as the etchant gas to thin germanium channel structures fabricated by standard photolithography. For effective material removal a sufficiently high electron influence is essential to avoid the pitfalls of this method. Topography and conductivity of FEBIE-modified structures prior and after the etching process was studied by AFM and by electrical I-V characteristics. The presented work demonstrates the potential of Cl-based FEBIE for device prototyping and electrical trimming of future Ge-based nanodevices.
The regeneration of nerves of the peripheral nervous system after injuries is a complex process. This study presents a novel in vitro neurite regeneration concept to investigate the regeneration of neurons and their processes with different concentrations of neurotrophic factors. The core part of the concept is a transparent microfluidic neurite isolation (NI) device affixed on top of a microelectrode array (MEA), providing a fast and easy way to assess both the growth and the electrical activity of neurites. The NI-MEA isolates neurites from the culture with microchannels that serve as guidance tubes, equipped with microelectrodes. Thus, the NI-MEA allows neurite growth, as observed by microscopy, to be correlated with neurite electrical activity, as measured by electrophysiological recordings. To demonstrate proof of concept of neurite regeneration, we cultured cells from the superior cervical ganglion of postnatal mice under different concentrations of nerve growth factor (NGF). During the regeneration process, we observed an increase in the number of neurites entering the microchannels along with an increase in spike activity recorded by the microelectrodes in the microchannels. We also observed a concentration-dependent effect of neurotrophic factor on the excitability of the growing neurites, with neurites bathed in 20 ng/ml NGF exhibiting enhanced early growth. Thus, our neurite regeneration concept with the NI-MEA device allows further study of neurotrophic factors and reduces the requirement for in vivo experiments on the regeneration of peripheral nerves after injury.
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