Abstract.We have conducted a systematic and comprehensive monitoring programme of the type Ia supernova 2000cx at late phases using the VLT and HST. The VLT observations cover phases 360 to 480 days past maximum brightness and include photometry in the BVRIJH bands, together with a single epoch in each of U and K s . While the optical bands decay by about 1.4 mag per 100 days, we find that the near-IR magnitudes stay virtually constant during the observed period. This means that the importance of the near-IR to the bolometric light curve increases with time. The finding is also in agreement with our detailed modeling of a type Ia supernova in the nebular phase. In these models, the increased importance of the near-IR is a temperature effect. We note that this complicates late-time studies where often only the V band is well monitored. In particular, it is not correct to assume that any optical band follows the bolometric light curve at these phases, and any conclusions based on such assumptions, e.g., regarding positron-escape, must be regarded as premature. A very simple model where all positrons are trapped can reasonably well account for the observations. The nickel mass deduced from the positron tail of this light curve is lower than found from the peak brightness, providing an estimate of the fraction of late-time emission that is outside of the observed wavelength range. Our detailed models show the signature of an infrared catastrophe at these epochs, which is not supported by the observations.

In this paper, co-evaporation of Cu(In,Ga)Se 2 (CIGS) in an inline single-stage process is used to fabricate solar cell devices with up to 18.6% conversion efficiency using a CdS buffer layer and 18.2% using a Zn 1 −x Sn x O y Cd-free buffer layer. Furthermore, a 15.6-cm 2 mini-module, with 16.8% conversion efficiency, has been made with the same layer structure as the CdS baseline cells, showing that the uniformity is excellent. The cell results have been externally verified. The CIGS process is described in detail, and material characterization methods show that the CIGS layer exhibits a linear grading in the [Ga]/([Ga]+[In]) ratio, with an average [Ga]/([Ga]+[In]) value of 0.45. Standard processes for CdS as well as Cd-free alternative buffer layers are evaluated, and descriptions of the baseline process for the preparation of all other steps in theÅngström Solar Center standard solar cell are given.

Zinc tin oxide (Zn(1-x)Sn(x)O(y)) has been proposed as an alternative buffer layer material to the toxic, and light narrow-bandgap CdS layer in CuIn(1-x),Ga(x)Se(2) thin film solar cell modules. In this present study, synchrotron-based soft X-ray absorption and emission spectroscopies have been employed to probe the densities of states of intrinsic ZnO, Zn(1-x)Sn(x)O(y) and SnO(x) thin films grown by atomic layer deposition. A distinct variation in the bandgap is observed with increasing Sn concentration, which has been confirmed independently by combined ellipsometry-reflectometry measurements. These data correlate directly to the open circuit potentials of corresponding solar cells, indicating that the buffer layer composition is associated with a modification of the band discontinuity at the CIGS interface. Resonantly excited emission spectra, which express the admixture of unoccupied O 2p with Zn 3d, 4s, and 4p states, reveal a strong suppression in the hybridization between the O 2p conduction band and the Zn 3d valence band with increasing Sn concentration.

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The influence of the thickness of atomic layer deposited Zn 1Àx Sn x O y buffer layers and the presence of an intrinsic ZnO layer on the performance of Cu(In,Ga)Se 2 solar cells are investigated. The amorphous Zn 1Àx Sn x O y layer, with a [Sn]/([Sn] + [Zn]) composition of approximately 0.18, forms a conformal and in-depth uniform layer with an optical band gap of 3.3 eV. The short circuit current for cells with a Zn 1Àx Sn x O y layer are found to be higher than the short circuit current for CdS buffer reference cells and thickness independent. On the contrary, both the open circuit voltage and the fill factor values obtained are lower than the references and are thickness dependent. A high conversion efficiency of 18.0%, which is comparable with CdS references, is attained for a cell with a Zn 1Àx Sn x O y layer thickness of approximately 13 nm and with an i-ZnO layer.

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