Relatively low travel costs and abundant opportunities for research funding in Switzerland and other developed countries allow researchers large amounts of international travel and collaborations, leading to a substantial carbon footprint. Increasing willingness to tackle this issue, in combination with the desire of many academic institutions to become carbon-neutral, calls for an in-depth understanding of academic air travel. In this study, we quantified and analyzed the carbon footprint of air travel by researchers from the École Polytechnique Fédérale de Lausanne (EPFL) from 2014 to 2016, which is responsible for about one third of EPFL’s total CO2 emissions. We find that the air travel impact of individual researchers is highly unequally distributed, with 10% of the EPFL researchers causing almost 60% of the total emissions from EPFL air travel. The travel footprint increases drastically with researcher seniority, increasing 10-fold from PhD students to professors. We found that simple measures such as restricting to economy class, replacing short trips by train and avoiding layovers already have the potential to reduce emissions by 36%. These findings can help academic institutions to implement travel policies which can mitigate the climate impact of their air travel.

We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong lightmatter coupling regime supporting propagating polaritons. They feature a normal mode splitting as large as 60 meV at low temperatures thanks to the large overlap between the optical mode and the active region, a polariton decay length up to 100 µm for photon-like polaritons and lifetime of 1-2 ps; with the latter values being essentially limited by residual absorption occurring in the waveguide. The fully lattice-matched nature of the structure allows for very low disorder and high in-plane homogeneity; an important asset for the realization of polaritonic integrated circuits that could support nonlinear polariton wavepackets up to room temperature thanks to the large exciton binding energy of 40 meV.

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The performance of vertical-cavity surface-emitting lasers (VCSELs) is strongly dependent on the spectral detuning between the gain peak and the resonance wavelength. Here, we use angle-resolved photoluminescence spectroscopy to investigate the emission properties of AlGaN-based VCSELs emitting in the ultraviolet-B spectral range with different detuning between the photoluminescence peak of the quantum-wells and the resonance wavelength. Accurate setting of the cavity length, and thereby the resonance wavelength, is accomplished by using doping-selective electrochemical etching of AlGaN sacrificial layers for substrate removal combined with deposition of dielectric spacer layers. By matching the resonance wavelength to the quantum-wells photoluminescence peak, a threshold power density of 0.4 MW/cm2 was achieved, and this was possible only for smooth etched surfaces with a root mean square roughness below 2 nm. These results demonstrate the importance of accurate cavity length control and surface smoothness to achieve low-threshold AlGaN-based ultraviolet VCSELs.