Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Braniste, Tudor; Ciers, Joachim; Monaico,; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

doi:10.1016/j.spmi.2016.12.041

Cited by 19 publications

(10 citation statements)

References 28 publications

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“…However, since the generation of pits in an HVPE process is not totally controlled, such self‐organized processes do not allow preparation of multilayer porous structure in a reliable controlled fashion. It was proposed to fabricate multilayer porous structures on the basis of samples grown by metal–organic chemical vapor‐phase deposition (MOCVD), [ 61 ] as shown in Figure 6c,d.…”

Section: Optical and Photonic Properties Of Wide‐bandgap Semiconducto...mentioning

confidence: 99%

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Monaico

Ursaki

et al. 2023

Physica Rapid Research Ltrs

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Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds having various bandgaps and crystallographic orientations are demonstrated with a focus on technological procedures applied for generating arrays of pores with a controlled design. The mechanism of pores growth under the photoresist masks is discussed and the connection between the design of the mask and the architecture of the produced porous structure is disclosed. The evolution of physical characteristics of the materials such as luminescence, optical, photonic, vibrational, hydrophilic, and hydrophobic properties as a result of anodization is investigated. Investigations are performed by means of scanning electron microscopy, photoluminescence and cathodoluminescence spectroscopy, and contact angle measurements. Some possible practical applications of the proposed technological approaches and the produced porous structures are briefly discussed.

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Section: Optical and Photonic Properties Of Wide‐bandgap Semiconducto...mentioning

confidence: 99%

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Monaico

Ursaki

et al. 2023

Physica Rapid Research Ltrs

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“…Its wide bandgap makes it also very promising for applications at the telecommunication wavelength of 1550 nm, for which both the twoand the three-photon absorption cannot take place. Electromagnetic interference shielding in an ultra-broad range of frequencies, distributed Bragg reflectors and UV-light driven fluorescent microengines are among the emergent applications of this compound when engineered in three-dimensional nanoarchitectures [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

et al. 2021

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The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

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“…These devices can be a high-power transistor [16,17], optical device with a short wavelength [18], photo-detector [19], light emitting diode (LED) device [20][21][22], solar cell [23,24], pH sensor [25] and betavoltaic device [26]. Many thin film deposition techniques can be used to grow high-quality GaN thin films including pulsed laser deposition [27], metal-organic chemical vapour deposition [28], atomic layer deposition [29], molecular beam epitaxy (MBE) [30], thermionic vacuum arc [31,32], sputtering [33] and sol-gel [34]. Radio frequency (RF) magnetron sputtering has emerged as a useful method for producing high-quality GaN thin films at lower temperature [35].…”

Section: Introductionmentioning

confidence: 99%

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Mantarcı

Kundakçı

2019

Bull Mater Sci

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Gallium nitride (GaN) thin films were grown on the Al 2 O 3 (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin film growth and its physical properties. The X-ray diffraction results confirmed that the GaN thin film had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of GaN thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin film. E 2 (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin film. The residual stress in the GaN thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications.

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Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Cited by 19 publications

References 28 publications

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

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