Indium–zinc oxide films (ZnxInyOx+1.5y), with x/y=0.08–12.0, are grown by low-pressure metal-organic chemical vapor deposition using the volatile metal–organic precursors In(TMHD)3 and Zn(TMHD)2 (TMHD=2,2,6,6–tetramethyl–3,5–heptanedionato). Films are smooth (rms roughness=40–50 Å) with complex microstructures which vary with composition. The highest conductivity is found at x/y=0.33, with σ=1000 S/cm (n-type; carrier density=3.7×1020 cm3; mobility=18.6 cm2/V s; dσ/dT<0). The optical transmission window of such films is broader than Sn-doped In2O3, and the absolute transparency rivals or exceeds that of the most transparent conductive oxides. X-ray diffraction, high resolution transmission electron microscopy, microdiffraction, and high resolution energy dispersive X-ray analysis show that such films are composed of a layered ZnkIn2O3+k phase precipitated in a cubic In2O3:Zn matrix.
This contribution reports the in situ growth of transparent, conducting GaxIn2-xO3 and ZnkIn2Ok+3 films by MOCVD (metal-organic chemical vapor deposition) techniques using In(dpm)3, Ga(dpm)3, and Zn(dpm)2 (dpm = dipivaloylmethanate) as volatile precursors. In the former series, film microstructure in the x = 0.4 – 1.0 range is predominantly cubic with 25° C electrical conductivities as high as 1300 S/cm (n-type; carrier density = 1.2 × 1020 cm−3, mobility = 68 cm2/Vs) and optical transparency in the visible region greater than that of ITO. In the latter series, films in the composition range K = 0.16 – 3.60 were studied; the microstructural systematics are rather complex. Electrical conductivities (25° C) as high as 1000 S/cm (n-type; carrier density = 3.7 × 1020 cm−3, mobility = 18.6 cm2/Vs) for K = 0.66 were measured. The optical transparency window is significantly broader than that of ITO.
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