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Materials with high electrical conductivity and optical transparency are needed for future flat panel display, solar energy, and other opto-electronic technologies. In xCd1-xO films having a simple cubic microstructure have been grown on amorphous glass substrates by a straightforward chemical vapor deposition process. The x ‫؍‬ 0.05 film conductivity of 17,000 S͞cm, carrier mobility of 70 cm 2 ͞Vs, and visible region optical transparency window considerably exceed the corresponding parameters for commercial indium-tin oxide. Ab initio electronic structure calculations reveal small conduction electron effective masses, a dramatic shift of the CdO band gap with doping, and a conduction band hybridization gap caused by extensive Cd 5s ؉ In 5s mixing.

Atomic-resolution Z-contrast images demonstrate unambiguously that the annealed, metalorganic chemical vapor deposition derived transparent In2O3–ZnO films have a polytypoid microstructure, consisting of ZnO slabs of variable width separated by single In–O octahedral layers. These In–O layers induce a polarity inversion in the two adjacent ZnO layers, which is reversed again by a mirror domain boundary inside each ZnO slab.

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