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Thin oxynitride grown in NO at low temperature was successfully used as gate insulator for fabricating MISiC Schottky hydrogen sensors. Response properties of the sensors were compared with other MISiC Schottky sensors with thicker or no oxynitride. It was found that the thin oxynitride played an important role in increasing device sensitivity and stability. Even at a low H 2 concentration, e.g., 100-ppm H 2 in N 2 , a significant response was observed, indicating a promising application for detecting hydrogen leakage. Moreover, a rapid and stable dynamic response on the introduction and removal of H 2 /N 2 mixed gas was realized for the sensor. Improved interface properties and larger barrier height associated with the thin oxynitride are responsible for the excellent response characteristics. As a result, NO oxidation could be a superior process for preparing highly sensitive and highly reliable MISiC Schottky hydrogen sensors.

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