Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects. In this paper, the effects of inhomogeneous biaxial strain in different regions of the AlGaN barrier layer on electrical properties of normally-off HEMTs with p-GaN gate were discussed. The results show that biaxial strain applied in three regions has different influence on transfer, output and breakdown characteristics of the device. The strain applied in region under gate has the most significant impact on threshold voltage and drain saturation current with a decreasing of 39% and an increasing of 97% respectively as the strained lattice constant increases from 3.173061Å to 3.187229Å.While, strain applied between gate and drain electrode can improve the off-state breakdown voltage by 12% with the increasing of strained lattice constant.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.