The lack of suitable cathodes is one of the key reasons that impede the development of aqueous zinc-ion batteries. Because of the inherently unsuitable structure and inferior physicochemical properties, the low-valent V2O3 as Zn2+ host could not be effectively discharged. Herein, we demonstrate that V2O3 (theoretical capacity up to 715 mAh g–1) can be utilized as a high-performance cathode material by an in situ anodic oxidation strategy. Through simultaneously regulating the concentration of the electrolyte and the morphology of the V2O3 sample, the ultraefficient anodic oxidation process of the V2O3 cathode was achieved within the first charging, and the mechanism was also schematically investigated. As expected, the V2O3 cathode with a hierarchical microcuboid structure achieved a nearly two-electron transfer process, enabling a high discharging capacity of 625 mAh g–1 at 0.1 A g–1 (corresponding to a high energy density of 406 Wh kg–1) and cycling stability (100% capacity retention after 10 000 cycles). This work not only sheds light on the phase transition process of low-valent V2O3 but also exploits a method toward design of advanced cathode materials.

An ingenious interface re-engineering strategy was applied to in situ prepare a manipulated LiHPO protective layer on the surface of Li anode for circumventing the intrinsic chemical stability issues of LiGePS (LGPS) to Li metal, specifically the migration of mixed ionic-electronic reactants to the inner of LGPS, and the kinetically sluggish reactions in the interface. As consequence, the stability of LGPS with Li metal increased substantially and the cycling of symmetric Li/Li cell showed that the polarization voltage could keep relative stable for over 950 h at 0.1 mA cm within ±0.05 V. The optimized ASSLiB of LiCoO (LCO)/LGPS/Li with interface-engineered structure was able to deliver long cycle life and high capacity, i.e., a reversible discharge capacity of 131.1 mAh g at the initial cycle and 113.7 mAh g at the 500th cycle under 0.1 C with a retention of 86.7%. In addition, the factors effected on the interphases formation of the LGPS/Li interface were analyzed, and the mechanism of the stability between LGPS and Li anode with protective layer was further investigated. Moreover, the probable causes of battery degradation were also explored. Above all, this work would give an alternative strategy for the modification of Li anode in high energy density solid-state lithium metal batteries.

MoSe 2 as a typical transition metal dichalcogenide holds great potential for energy storage and catalysis but its performance is largely limited by its poor conductivity. Bi 2 Se 3 nanosheets, a kind of topological insulators, possess gapless edges on boundary and show metallic character on surface. According to the principle of complementary, a novel integrated quasiplane structure of MoSe 2 /Bi 2 Se 3 hybrids is designed with artistic heteronanostructures via a hot injection in colloidal system. Interestingly, the heteronanostructures are typically constituted by single-layer Bi 2 Se 3 hexagonal nanoplates evenly enclosed by small ultrathin hierarchical MoSe 2 nanosheets on the whole surfaces. X-ray photoelectron spectroscopy investigations suggest obvious electron transfer from Bi 2 Se 3 to MoSe 2 , which can help to enhance the conductivity of the hybrid electrode. Especially, schematic energy band diagrams derived from ultraviolet photoelectron spectroscopy studies indicate that Bi 2 Se 3 has higher E F and smaller Φ than MoSe 2 , further confirming the electronic modulation between Bi 2 Se 3 and MoSe 2 , where Bi 2 Se 3 serves as an excellent substrate to provide electrons and acts as channels for high-rate transition. The MoSe 2 / Bi 2 Se 3 hybrids demonstrating a low onset potential, small Tafel slope, high current density, and long-term stability suggest excellent hydrogen evolution reaction activity, whereas a high specific capacitance, satisfactory rate capability, and rapid ions diffusion indicate enhanced supercapacitor performance.

Neuromorphic computing (NC) is a new generation of artificial intelligence. Memristors are promising candidates for NC owing to the feasibility of their ultrahigh‐density 3D integration and their ultralow energy consumption. Compared to traditional electrical memristors, the emerging optoelectronic memristors are more attractive owing to their ability to combine the advantages of both photonics and electronics. However, the inability to reversibly tune the memconductance with light has severely restricted the development of optoelectronic NC. Here, an all‐optically controlled (AOC) analog memristor is realized, with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. The device is based on the relatively mature semiconductor material InGaZnO and a memconductance tuning mechanism of light‐induced electron trapping and detrapping. It is found that the light‐induced multiple memconductance states are nonvolatile. Furthermore, spike‐timing‐dependent plasticity learning can be mimicked in this AOC memristor, indicating its potential applications in AOC spiking neural networks for highly efficient optoelectronic NC.