Recent advances in chemical vapour deposition have led to the fabrication of large graphene sheets on metal foils for use in research and development. However, further breakthroughs are required in the way these graphenes are transferred from their growth substrates onto the final substrate. Although various methods have been developed, as yet there is no general way to reliably transfer graphene onto arbitrary surfaces, such as 'soft' ones. Here, we report a method that allows the graphene to be transferred with high fidelity at the desired location on almost all surfaces, including fragile polymer thin films and hydrophobic surfaces. The method relies on a sacrificial 'self-releasing' polymer layer placed between a conventional polydimethylsiloxane elastomer stamp and the graphene that is to be transferred. This self-releasing layer provides a low work of adhesion on the stamp, which facilitates delamination of the graphene and its placement on the new substrate. To demonstrate the generality and reliability of our method, we fabricate high field-strength polymer capacitors using graphene as the top contact over a polymer dielectric thin film. These capacitors show superior dielectric breakdown characteristics compared with those made with evaporated metal top contacts. Furthermore, we fabricate low-operation-voltage organic field-effect transistors using graphene as the gate electrode placed over a thin polymer gate dielectric layer. We finally demonstrate an artificial graphite intercalation compound by stacking alternate monolayers of graphene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). This compound, which comprises graphene sheets p-doped by partial hole transfer from the F4TCNQ, shows a high and remarkably stable hole conductivity, even when heated in the presence of moisture.
Thin films of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (C14–PBTTT) exhibit a monolayer-terraced morphology that indicates a pronounced lamellar order with π-stacks of extended polymer chains. Previously this remarkable state of order was thought to be promoted by the interdigitation of alkyl side chains between the lamellae during cooling from the liquid-crystalline (LC) phase. Here we establish that the key to this ordering in fact is the formation of unentangled π-stacks of extended polymer chains in dilute solutions of chlorobenzene (CB) or 1,2-dichlorobenzene (o-DCB), which though routinely used as the “best” solvents are in fact borderline solvents. Film formation causes these π-stacks to deposit substantially oriented in the film plane, while the subsequent anneal and cool from LC phase accentuates this incipient order to develop the monolayer-terraced morphology. This mechanism is supported by the following lines of evidence. (i) Hydrodynamic and viscometry measurements respectively of the Kuhn segment length and Mark–Houwink–Sakurada exponent of PBTTT reveal that CB is a near-Θ solvent, and PBTTT is significantly stiffer than regioregular polythiophene. (ii) Solution-state UV–vis spectroscopy reveals an early coil → rod transition in highly dilute solutions, which gives rise to unentangled π-stacks. (iii) Solid-state UV–vis spectroscopy, atomic force microscopy and variable-angle spectroscopic ellipsometry together reveal the as-deposited π-stacks are already substantially oriented in the film plane. We further demonstrate that this monolayer-terraced morphology can also be induced in regioregular poly(3-hexylthiophene) films using a borderline solvent mixture of chlorobenzene and mesitylene, and in very dilute CB where the incipient π-stacks do not entangle. Therefore, this dilute π-stacking mechanism is general. Processing with a borderline solvent or solvent additive thus provides a general route to obtain superior supramolecular order in π-stackable conjugated polymers.
Fourier-transform infrared spectroscopy of two prototypical high-mobility polymer organic semiconductors (OSCs), regioregular poly(3-hexylthiophene) (rr-P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT), reveals photoinduced doping that involves both oxygen and water dissolved in the polymer matrix when exposed to light. The equilibrium concentration of water at room temperature and 60% relative humidity in these films is $2 Â 10 19 cm À3, and exists primarily as monomers, with a small population of dimers and trimers. Photo-excitation in room light ultimately generates a polaron density of the order of a few 10 17 cm À3, which is sufficient to degrade the saturation and 'on-off' characteristics of organic field-effect transistors, and the dark current of organic photovoltaics. The dopant anion has been identified primarily to be hydroxide ion species. This process occurs to a smaller extent in wet nitrogen, but even less in dry oxygen, which points to a key role of the dissolved water. The relative stability of PBTTT over rr-P3HT is found to be largely kinetic in origin, attributed to its higher crystallinity (X-ray diffraction crystallinity 27% vs 21% in rr-P3HT), and shorter pÁÁÁp stacking distance (3.64 Å vs 3.78 Å in rr-P3HT), which gives better moisture exclusion from its thiophene backbone.Understanding the degradation mechanisms of polymer organic semiconductor (OSC) devices is an essential step to develop more robust OSC systems and their devices, whether in light-emitting diodes (LEDs), field-effect transistors (FETs), or photovoltaics (PVs). Despite decades of research, detailed spectroscopic studies have seldom been reported, [1,2] primarily because of the considerable challenges to identify chemical transformations that occur on sub-1-mol % of repeat units in the thin films. Yet changes at these levels can be electronically significant. The typical carrier density for LED operation [3] is $1 Â 10 18 cm À3 , which is approximately 0.05 mol % of repeat units, assuming a unit molecular weight of 300 g mol À1 and density of 1.1 g cm À3. For organic FETs, doping at this level can open a parallel source-drain conduction path in the bulk that degrades the shut 'off' and saturation characteristics. [4,5] A simple performance figure-of-merit is the 'on-off' ratio, which for long-channel FETs with a small drain voltage V d and an off-state defined at a gate voltage (V g ) of 0 V is given by i on / i off ¼ mC ox (V g À V th )/(sd), where m is the carrier mobility, C ox is the gate-dielectric capacitance, (V g À V th ) is the effective gate voltage, s is the shunt conductance, and d is the film thickness. For m $ 0.1 cm 2 V À1 s À1 , d $ 30 nm, and typical values for the other parameters, we require s < 10 À8 S cm À1 to give an i on /i off ratio > 10 6
Articles you may be interested inLight-soaking issue in polymer solar cells: Photoinduced energy level alignment at the sol-gel processed metal oxide and indium tin oxide interface Energy-level alignment and charge injection at metal/ C 60 /organic interfaces Appl. Phys. Lett. 95, 043302 (2009); 10.1063/1.3189176Energy level alignment at organic semiconductor/metal interfaces: Effect of polar self-assembled monolayers at the interface
The infrared absorption spectrum of the polaron charges at the Fermi level EF in a heavily p-doped conducting poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film has been measured using interferogram-modulated Fourier-transform charge-modulation spectroscopy. The spectrum indicates softer phonons and weaker electron-phonon coupling riding on a strongly redshifted Drude-like electronic transition, different from the population-averaged "bulk" spectrum. This provides direct evidence that the EF holes are sufficiently delocalized even in such disordered materials to reside in an energy continuum (band states) while the rest of the hole population resides in self-localized gap states.
The influence of fluid droplet properties on the droplet-on-demand jetting of a Newtonian model fluid (water-isopropanol-ethylene glycol ternary system) has been studied. The composition of the fluid was adjusted to investigate how the Ohnesorge number (Oh) influences droplet formation (morphology and speed) by a microfabricated short-channel shear-mode piezoelectric transducer. The fluid space for satellite-free single droplet formation was indeed found to be bound by upper and lower Oh limits, but these shift approximately linearly with the piezo pulse voltage amplitude V o , which has a stronger influence on jetting characteristics than pulse length. Therefore the jettable fluid space can be depicted on a V o -Oh diagram. Satellite-free droplets of the model fluid can be jetted over a wide Oh range, at least 0.025 to 0.5 (corresponding to Z = Oh −1 of 40 to 2), by adjusting V o appropriately. Air drag was found to dominate droplet flight, as may be expected. This can be accurately modelled to yield droplet formation time, which turned out to be 20-30 µs under a wide range of jetting conditions. The corresponding initial droplet speed was found to vary linearly with V o , with a fluid-dependent threshold but a fluid-independent slope, and a minimum speed of about 2 m s −1 . This suggests the existence of isovelocity lines that run substantially parallel to the lower jetting boundary in the V o -Oh diagram.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.