Atomically thin tungsten disulfide (WS2), a structural analogue to MoS2, has attracted great interest due to its indirect-to-direct band-gap tunability, giant spin splitting, and valley-related physics. However, the batch production of layered WS2 is underdeveloped (as compared with that of MoS2) for exploring these fundamental issues and developing its applications. Here, using a low-pressure chemical vapor deposition method, we demonstrate that high-crystalline mono- and few-layer WS2 flakes and even complete layers can be synthesized on sapphire with the domain size exceeding 50 × 50 μm(2). Intriguingly, we show that, with adding minor H2 carrier gas, the shape of monolayer WS2 flakes can be tailored from jagged to straight edge triangles and still single crystalline. Meanwhile, some intersecting triangle shape flakes are concomitantly evolved from more than one nucleus to show a polycrystalline nature. It is interesting to see that, only through a mild sample oxidation process, the grain boundaries are easily recognizable by scanning electron microscopy due to its altered contrasts. Hereby, controlling the initial nucleation state is crucial for synthesizing large-scale single-crystalline flakes. We believe that this work would benefit the controlled growth of high-quality transition metal dichalcogenide, as well as in their future applications in nanoelectronics, optoelectronics, and solar energy conversions.
Controllable synthesis of macroscopically uniform, high-quality monolayer MoS2 is crucial for harnessing its great potential in optoelectronics, electrocatalysis, and energy storage. To date, triangular MoS2 single crystals or their polycrystalline aggregates have been synthesized on insulating substrates of SiO2/Si, mica, sapphire, etc., via portable chemical vapor deposition methods. Herein, we report a controllable synthesis of dendritic, strictly monolayer MoS2 flakes possessing tunable degrees of fractal shape on a specific insulator, SrTiO3. Interestingly, the dendritic monolayer MoS2, characterized by abundant edges, can be transferred intact onto Au foil electrodes and serve as ideal electrocatalysts for hydrogen evolution reaction, reflected by a rather low Tafel slope of ∼73 mV/decade among CVD-grown two-dimensional MoS2 flakes. In addition, we reveal that centimeter-scale uniform, strictly monolayer MoS2 films consisting of relatively compact domains can also be obtained, offering insights into promising applications such as flexible energy conversion/harvesting and optoelectronics.
A new anhydrous aluminoborate Al4B6O15 (PKU-5) has been synthesized in a boric acid flux in a closed system at 350 degrees C. PKU-5, which crystallizes in the space group R3 with the lattice constants a=11.43398(9) and c=6.48307(5) A, consists of Al octahedra and triangularly coordinated boron. The Al octahedron adopts the (10,3)-a network, in which each octahedron shares three edges with the neighboring octahedra forming ten-membered-ring channels. The octahedral backbone in PKU-5 can be considered as a primary octahedral framework topology and, setting out from the structures of the aluminoborates (PKU-1 and PKU-5), we propose construction rules for the octahedral frameworks. There are two types of connections for edge-sharing octahedra in porous frameworks, trans and cis type, by which various microporous octahedral frameworks of different topologies can be constructed. The borate groups share oxygens with the Al octahedral frameworks forming two kinds of three-membered-ring units consisting of two octahedra and one triangle (2Al+B) and one octahedron and two triangles (Al+2B), respectively.
A framework of AlO6 octahedra is present in the microporous aluminoborate HAl3B6O12(OH)4 (PKU‐1; see picture), which was synthesized from AlCl3 in a boric acid flux. The octahedra share two or three edges with neighboring octahedra to form a framework with 18‐ring tunnels along [001] and 10‐ring tunnels along {100}. The borate groups share vertices with the octahedra, compensating the negative charge of the octahedral framework and almost completely blocking the 10‐ring channels.
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