Vitiligo is an acquired, progressive depigmenting disorder of unknown etiology. In this study, to clarify pathogenesis of vitiligo, the marginal skin of actively spreading and stable vitiligo was examined using ICAM-1, HLA-DR, CD4 and CD8 monoclonal antibodies. In immunohistochemical study, ICAM-1 was expressed in four of five epidermis in active lesions, but not in stable lesion. Dermal ICAM-1 was also expressed in all active and stable lesions. HLA-DR was also expressed in all active epidermis in active lesions, but two of five epidermis in stable lesion. Dermal HLA-DR was also expressed in all active and stable lesion. CD4 lymphocytes were expressed more strongly in active lesion, but CD8 lymphocytes were not different in both lesions. There was no significant difference of degree of positivity with CD4 and CD8 in normal control specimens. In conclusion, we think that ICAM-1 and HLA-DR expression, cytokines released from keratinocytes, melanocytes or lymphocytes and infiltration of activated T-lymphocytes play an important role in disease activity.

The present data show that immunologic abnormalities, both cellular and humoral, are involved in the pathogenesis of vitiligo.

Solitary morphoea profunda is an unusual form of scleroderma, characterized by marked fibrosis, hyalinization of collagen fibres, and inflammatory cell infiltration in the deep dermal and subcutaneous layers. We describe a 58-year-old man showing solitary morphoea profunda. Plate-like osteoma cutis, with transepidermal elimination of bony material, within the morphoea profunda, was present.

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhanced THz emission from Germanium nanowires (Ge NWs). The origin of THz generation from Ge NWs can be interpreted using two terms: high photoexcited electron-hole carriers (Δn) and strong built-in electric field (Eb) at the wire surface based on the relation . The first is related to the extensive surface area needed to trigger an irradiated photon due to high aspect ratio. The second corresponds to the variation of Fermi-level determined by confined surface charges. Moreover, the carrier dynamics of optically excited electrons and holes give rise to phonon emission according to the THz region.

Si 1Àx Ge x nanowires (NWs) were prepared by a Vapor-Liquid-Solid (VLS) procedure using Au as the catalyst at a fixed growth temperature of 400 C. The alloy composition was adjusted and the growth rate of the Si 1Àx Ge x NWs was achieved by varying the inlet gas ratio and the H 2 flow rate. The growth of Si 1Àx Ge x NWs can be explained by two mechanisms that are related to growth kinetics; first, collisional activation is a dominant factor at flow rates of H 2 100 sccm and second, in the case of a H 2 flow rate of 200 sccm, the reaction is unimolecular. In addition, a Ge concentration (0.56 < x < 0.91) in Si 1Àx Ge x NWs is observed at a relatively high growth temperature of 400 C as compared with data reported in the literature. The findings herein indicate that the high Ge concentration (x) can be attributed to the presence of interstitial Ge atoms in the Si 1Àx Ge x NWs, when they are grown under non-equilibrium conditions. This was confirmed by comparing the measured Ge concentration between EDX and XRD, Raman and strongly demonstrated by XPS results indicating the development of Ge interstitial states at lower binding energy, rather than bulk-like bonding.

Partial unilateral lentiginosis associated with segmental neurofibromatosis is rate. Therefore, we describe here a patient with partial unilateral lentiginosis associated with ipsilateral segmental neurofibromatosis who developed multiple, rice-sized, brown macules on the right side of her face, trunk, and upper arm and several bean-sized, cafe-au-lait spots on the right upper arm and right upper back. To our knowledge, partial unilateral lentiginosis associated with ipsilateral segmental neurofibromatosis has not been reported in the English literature.

No abstract

A 9‐year‐old Korean boy visited the Department of Dermatology, Yonsei University Wonju College of Medicine, with a nodule on the right earlobe with pruritus for 6 months. His past medical history and family history were unremarkable. Physical examination revealed a 5 mm diameter, oval, firm, erythematous nodule on the helix of his right earlobe (Fig. 1). He denied any antecedent trauma. Histopathologic examination of an excisional biopsy specimen showed epidermal hyperplasia and focal parakeratosis. In the upper dermis there were focal collections of deep blue staining calcified material surrounded by some lymphocytes and histiocytes (Fig. 2). The surrounding dermis contained numerous small, well‐differentiated hair follicles with thick fibrous root sheaths and some sebaceous glands connected with the hair follicles (Fig. 3). Von Kossa stain confirmed the impression that the nodules consisted of calcium. Serum calcium and phosphorus levels were normal.