We demonstrate c-plane InGaN/GaN light emitting diodes (LEDs) using polarization engineered n-type AlGaN/GaN superlattices (SLs). Aluminum composition variation and Si-delta doping concepts were incorporated in the SLs design as a means to improve vertical and lateral carrier transport in SLs. Compared to a reference n-type GaN layer having lateral conductivity of 197 Ω cm, a SLs structure exhibited significantly improved lateral conductivity, as high as 569 Ω cm, without any vertical transport degradation. Optimized AlGaN/GaN SLs structure embedded in LED improved current spreading and resulted in 13.7% and 6.7% enhancement of output power and forward voltage at 60 A/cm2, respectively.
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