A compact and low loss silicon-on-insulator rib waveguide 90 degrees bend is designed and demonstrated. An interface realized by a trench filled with SU8 at the corner of a waveguide bend effectively reflects incoming light through total internal reflection (TIR). In order to accurately position the SU8-filled trench relative to the waveguide and reduce sidewall roughness of the interface, electron beam lithography (EBL) is employed while inductively coupled plasma reactive ion etching (ICP RIE) is used to achieve a vertical sidewall. The measured loss for TE polarization is 0.32 dB +/- 0.02 dB/bend at a wavelength of 1.55 microm.
Compact silicon-on-insulator (SOI) rib waveguide 90 degrees splitters based on narrow, high-aspect ratio (~10:1) trenches are designed and experimentally demonstrated. The splitter area is only 11 mum x 11 mum. Splitter optical performance is investigated as a function of both trench width and refractive index of the trench fill material. We examine three trench fill materials, air (n=1.0), SU8 (n=1.57), and index matching fluid (n=1.733), and find good agreement between experimental measurement and three dimensional (3D) finite difference time domain (FDTD) simulation. A splitting ratio of 49/51 (reflection/transmission) is measured for an index fluid-filled trench 82nm wide.
We demonstrate compact waveguide splitter networks in siliconon- insulator (SOI) rib waveguides using trench-based splitters (TBSs) and bends (TBBs). Rather than a 90 degrees geometry, we use 105 degrees TBSs to facilitate reliable fabrication of high aspect ratio trenches suitable for 50/50 splitting when filled with SU8. Three dimensional (3D) finite difference time domain (FDTD) simulation is used for splitter and bend design. Measured TBB and TBS optical efficiencies are 84% and 68%, respectively. Compact 105 degrees 1 x 4, 1 x 8, and 1 x 32 trench-based splitter networks (TBSNs) are demonstrated. The measured total optical loss of the 1 x 32 TBSN is 9.15 dB. Its size is only 700 microm x 1600 microm for an output waveguide spacing of 50 microm.
A hybrid bend is designed and fabricated on the silicon-on-insulator system. The hybrid bend comprises a line-defect 120° bend sandwiched by double air trenches in a photonic crystal platform. The simulation and experimental results show that the hybrid bend has low insertion loss and large high-transmission bandwidth.
We demonstrate a compact trench-based silicon-on-insulator ͑SOI͒ rib waveguide ring resonator comprised of trench-based bends and splitters. It has a perimeter of 50 m and occupies an area of only 25ϫ 25 m. The measured free spectral range ͑FSR͒ is 13.2 nm, which the largest reported for an SOI rib waveguide ring resonator. The measured FSR, full width at half maximum, and quality factor match reasonably well with analytical calculations. Further calculation shows that a FSR of 50.8 nm is achievable for an SOI rib waveguide ring resonator with a perimeter of 15 m.
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