Halide solid electrolytes have been considered as the most promising candidates for practical high-voltage all-solidstate lithium-ion batteries (ASSLIBs) due to their moderate ionic conductivity and good interfacial compatibility with oxide cathode materials. Aliovalent ion doping is an effective strategy to increase the ionic conductivity of halide electrolytes. However, the effects of ion doping on the electrochemical stability window of halide electrolytes and carbon additive on electrochemical performance are still unclear by far. Herein, a series of Zr-doped Li 3−x Er 1−x Zr x Cl 6 halide solid electrolytes (SEs) are synthesized through a mechanochemical method and the effects of Zr substitution on the ionic conductivity and electrochemical stability window are systematically investigated. Zr doping can increase the ionic conductivity, whereas it narrows the electrochemical stability window of the Li 3 ErCl 6 electrolyte simultaneously. The optimized Li 2.6 Er 0.6 Zr 0.4 Cl 6 electrolyte exhibits both a high ionic conductivity of 1.13 mS cm −1 and a high oxidation voltage of 4.21 V. Furthermore, carbon additives are demonstrated to be beneficial for achieving high discharge capacity and better cycling stability and rate performance for halide-based ASSLIBs, which are completely different from the case of sulfide electrolytes. ASSLIBs with uncoated LiCoO 2 cathode and carbon additives exhibit a high discharge capacity of 147.5 mAh g −1 and superior cycling stability with a capacity retention of 77% after 500 cycles. This work provides an in-depth understanding of the influence of ion doping and carbon additives on halide solid electrolytes and feasible strategies to realize highenergy-density ASSLIBs.
Owing
to their defect tolerance and phase stability, α-CsPbI3 colloidal quantum dots (CQDs) with high mobility and 80–95%
photoluminescence quantum yield (PLQY) are promising candidates for
next-generation photovoltaics (PVs). Recently, α-CsPbI3 CQD PVs have begun to show promising power conversion efficiencies
of 13.4%, with the open-circuit voltage approaching the Shockley–Queisser
limit. These devices are stable in ambient conditions for several
months. However, the short-circuit current density (J
SC) of ∼12 mA/cm2 is low, and the limiting
mechanisms are unclear. In this work, we review the strategies for
improving the J
SC and the effect of interfaces
and mobility of the charge transport layers on carrier extraction.
We also evaluate strategies to enhance the stability of CsPbI3 CQDs under illumination, as well as methods to elucidate
the recombination losses in the CQD PVs and methods to reduce these
losses. This work provides routes to achieve efficient and stable
α-CsPbI3 CQD PVs.
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