A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

Mavlonov, Abdurashid; Razykov, T. M.; Raziq, Fazal; Gan, Jiantuo; Chantana, Jakapan; Nishimura, Takahito; Wei, Haoming; Zakutayev, Andriy; Minemoto, Takashi; Zu, Xiaotao; Li, Sean

doi:10.1016/j.solener.2020.03.009

Cited by 267 publications

(199 citation statements)

References 214 publications

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“…Antimony sulfide (Sb 2 S 3 ) is an emerging inorganic photovoltaic material with a one-dimensional crystal structure, and it has an indirect bandgap of~1.7 eV [44,59]. Both Sb and S are earth-abundant elements, making Sb 2 S 3 free from the problem of supply shortages of raw materials [60]. Previously, Sb 2 S 3 was mainly developed for sensitized solar cells and has achieved a record PCE of 7.5% [53].…”

Section: Potential Candidates As Top Cell For Si-based Tandemsmentioning

confidence: 99%

Possible top cells for next-generation Si-based tandem solar cells

Chen

Tang

2020

Front. Optoelectron.

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Si-based solar cells, which have the advantages of high efficiency, low manufacturing costs, and outstanding stability, are dominant in the photovoltaic market. Currently, state-of-the-art Si-based solar cells are approaching the practical limit of efficiency. Constructing Si-based tandem solar cells is one available pathway to break the theoretical efficiency limit of single-junction silicon solar cells. Various top cells have been explored recently in the construction of Si-based tandem devices. Nevertheless, many challenges still stand in the way of extensive commercial application of Si-based tandem solar cells. Herein, we summarize the recent progress of representative Si-based tandem solar cells with different top cells, such as III-V solar cells, wide-bandgap perovskite solar cells, cadmium telluride (CdTe)-related solar cells, Cu(In,Ga)(Se,S) 2 (CIGS)-related solar cells, and amorphous silicon (a-Si) solar cells, and we analyze the main bottlenecks for their next steps of development. Subsequently, we suggest several potential candidate top cells for Si-based tandem devices, such as Sb 2 S 3 , Se, CdSe, and Cu 2 O. These materials have great potential for the development of high-performance and low-cost Si-based tandem solar cells in the future.

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Section: Potential Candidates As Top Cell For Si-based Tandemsmentioning

confidence: 99%

Possible top cells for next-generation Si-based tandem solar cells

Chen

Tang

2020

Front. Optoelectron.

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“…Photovoltaic (PV) and photoelectrochemical (PEC) cells based on Sb2Se3 have seen a rapid rise in interest in recent years and significant progress has been made in their power conversion efficiencies, [1,2] which is primarily due to its high absorption coefficient and excellent optoelectronic properties. However, a major challenge for Sb2Se3 is the low photovoltage obtained from such devices.…”

Section: Introductionmentioning

confidence: 99%

Unravelling Defect Passivation Mechanisms in Sulfur-treated Sb2Se3

Prabhakar¹,

Moehl²,

Friedrich³

et al. 2021

Preprint

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Sb2Se3 has emerged as an important photoelectrochemical (PEC) and photovoltaic (PV) material due to its rapid rise in photoconversion efficiencies. However, despite its binary nature, Sb2Se3 has a complex defect chemistry, which reduces the maximum photovoltage that can be obtained. Thus, it is important to understand these defects and to develop passivation strategies in order to further improve this material. In this work, a comprehensive investigation of the charge carrier dynamics of Sb2Se3 and the influence of sulfur treatment on its optoelectronic properties was performed using time resolved microwave conductivity (TRMC), photoluminescence (PL) spectroscopy and low frequency Raman spectroscopy (LFRS). The key finding in this work is that upon sulfur treatment of Sb2Se3, the carrier lifetime is increased by the passivation of deep defects in Sb2Se3 in both the surface region and the bulk, which is evidenced by increased charge carrier lifetime of TRMC decay dynamics, increased radiative recombination efficiency and decreased deep defect level emission (PL), and improved long-range order in the material (LFRS). These findings provide crucial insights into the defect passivation mechanisms in Sb2Se3 paving the way for developing highly efficient PEC and PV devices.

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“…However, the toxicity of Cd and scarcity of Te, In, and Ga partly restrict their application. Thus, exploring Earth‐abundant and nontoxic photovoltaic materials, such as Cu 2 ZnSnS 4 , GeSe, CuSbS 2 , CuSbSe 3 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 (S,Se) 3 , and so on, are required. Among them, antimony chalcogenide thin‐film solar cells, including Sb 2 Se 3 , Sb 2 S 3 , and Sb 2 (S,Se) 3 alloy, have been developed rapidly in recent years.…”

Section: Introductionmentioning

confidence: 99%

Over 7% Efficiency of Sb₂(S,Se)₃ Solar Cells via V‐Shaped Bandgap Engineering

et al. 2020

Solar RRL

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Antimony chalcogenides (including Sb2S3, Sb2Se3, and Sb2(S,Se)3 alloy) have emerged as promising solar absorber materials. Notably, the Sb2(S,Se)3 alloy possesses continuously tunable bandgap from 1.1 to 1.7 eV, which covers the ideal bandgap for single‐junction photovoltaics governed by the Shockley–Queisser theory. Moreover, the bandgap gradient provides effective ways for photogenerated carriers collection and has the potential for high‐efficient Sb2(S,Se)3 alloy solar cells. Herein, a V‐shaped distributional bandgap in Sb2(S,Se)3 solar cells is reported through a simple dual‐source vapor transport deposition process, enabling the synergetic increase of the open‐circuit voltage (VOC) and short‐circuit current (JSC). Through careful optimization, a power conversion efficiency of 7.27% under AM1.5G illumination is obtained, with VOC and JSC of 0.46 V and 29.6 mA cm−2, respectively. This V‐shaped bandgap engineering provides an effective method to enhance the device performance and can be extended to other chalcogenide thin‐film solar cells such as Sn–X, Ge–X, Cu–Sb–X (X = S and Se), and so on.

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A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

Cited by 267 publications

References 214 publications

Possible top cells for next-generation Si-based tandem solar cells

Possible top cells for next-generation Si-based tandem solar cells

Unravelling Defect Passivation Mechanisms in Sulfur-treated Sb2Se3

Over 7% Efficiency of Sb₂(S,Se)₃ Solar Cells via V‐Shaped Bandgap Engineering

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A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

Cited by 267 publications

References 214 publications

Possible top cells for next-generation Si-based tandem solar cells

Possible top cells for next-generation Si-based tandem solar cells

Unravelling Defect Passivation Mechanisms in Sulfur-treated Sb2Se3

Over 7% Efficiency of Sb2(S,Se)3 Solar Cells via V‐Shaped Bandgap Engineering

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Product

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Over 7% Efficiency of Sb₂(S,Se)₃ Solar Cells via V‐Shaped Bandgap Engineering