In this paper, the self-consistent solution of Schrödinger-Poisson equations was realized to estimate the radiative recombination coefficient and the lifetime of a single blue light InGaN/GaN quantum well (QW). The results revealed that the recombination rate was not in proportion to the total injected carriers, and thus the Bnp item was not an accurate method to analyze the recombination process. Carrier screening and band filling effects were also investigated, and an extended Shockley-Read-Hall coefficient A(kt) with a statistical weight factor due to the carrier distributions in real and phase space of the QW was proposed to estimate the total nonradative current loss including carrier nonradiative recombination, leakage and spillover to explain the efficiency droop behaviors. Without consideration of the Auger recombination, the blue shift of the electroluminescence spectrum, light output power and efficiency droop curves as a function of injected current were all investigated and compared with the experimental data of a high brightness blue light InGaN/GaN multiple QWs light emitting diode to confirm the reliability of our theoretical hypothesis.

Electroluminescence (EL) spectra of InGaN/GaN multiple quantum well light emitting diodes with different piezoelectric polarization fields were investigated under pulsed and direct currents. We find a positive correlation between the piezoelectric polarization field and the thermally induced red-shift of the EL spectra at high direct currents above 25 A/cm2. Under pulsed current, when thermal effects are negligible, a non-uniform EL spectrum blue-shift rate as a function of injection level is observed and compared with numerical results obtained by both self-consistent and non-self-consistent K·P methods. We conclude that the screening effect is positively related to the piezoelectric polarization field, but the band filling-induced blue-shift is almost independent from the piezoelectric field. The electrostatic fields induced by free carriers in the quantum wells increase rapidly with current but tend to saturate at higher injection where the band filling effect becomes the dominant mechanism for the blue-shift. Finally, at high injection above 30 A/cm2, an increase in Auger recombination and carrier leakage holds the spectral peaks almost constant in position.

Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements.

It is difficult to measure the junction temperature of every chip in the light emitting diode (LED) integrated light source by using common experimental methods. In this paper, a model to simulate the whole temperature field in sources face of LED integrated light is proposed. Fourier-based solution is used to solve the heat equation in three dimensions. The thermal model is programmed by MATLAB and has been validated by finite element method simulations. The comparison shows that the relative error between these two models is within 3.6%.